Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Chiu-Tsung Huang"'
Autor:
Ching Hua Chen, Ssu-yu Liu, Tsai Sung Yuan, Tai Hsin, Huang Sheng Hui, Shi Xin Jian, Enoch Rufus Young, Hung Shen Pai, Chiu Tsung Huang, Chiu Ching Kang
Publikováno v:
2021 16th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cd0169158af1d7810fe9b4ea62e985c
https://doi.org/10.1109/impact53160.2021.9696767
https://doi.org/10.1109/impact53160.2021.9696767
Autor:
Riichiro Shirota, Su Lu, Ming-Kun Huang, Chun-Hsing Shih, Yan-Xiang Luo, Sau-Mou Wu, Wei Chang, Ji-Ting Liang, A Wang, Chiu-Tsung Huang, Nguyen Dang Chien, Chenhsin Lien, Wen-Fa Wu
Publikováno v:
IEEE Transactions on Electron Devices. 58:1257-1263
The edge encroachment of tunnel oxide is experimentally found to degrade the Fowler-Nordheim (FN) tunneling gate current of NAND-type Flash cells. This work elucidates the impact of edge encroachment on FN tunneling current for use in programming and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::532afbdc317724cea4104c8b8c0d0960
https://doi.org/10.1109/ted.2011.2105492
https://doi.org/10.1109/ted.2011.2105492
Autor:
Houng-Chi Wei, Pei-Shan Shieh, Saysamone Pittikoun, Kenji Tokami, Chiu-Tsung Huang, Hsin-Heng Wang, Seiichi Aritome, Ricky Kuo, Shin-Hsien Chen
Publikováno v:
2009 IEEE International Memory Workshop.
In this paper, we have reported a new failure phenomenon of read-disturb in MLC NAND flash memory caused by boosting hot-carrier injection effect. (1) The read-disturb failure occurred on unselected WL (WLn+1) after the adjacent selected WL (WLn) was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9719d34699e6173a99e64acf5978b3ad
https://doi.org/10.1109/imw.2009.5090574
https://doi.org/10.1109/imw.2009.5090574
Publikováno v:
2007 IEEE Conference on Electron Devices & Solid-State Circuits; 2007, p201-204, 4p
Autor:
Hsin-Heng Wang, Pei-Shan Shieh, Chiu-Tsung Huang, Tokami, K., Kuo, R., Shin-Hsien Chen, Houng-Chi Wei, Pittikoun, S., Aritome, S.
Publikováno v:
2009 IEEE International Memory Workshop; 2009, p1-2, 2p
Autor:
Hsin-Heng Wang, Chiu-Tsung Huang, Shin-Hsien Chen, Kuo, R., Sophia Liu, Ling-Kuey Yang, Houng-Chi Wei, Pittikoun, S., Shirota, R., Chin-chen Cho
Publikováno v:
2008 International Symposium on VLSI Technology, Systems & Applications (VLSI-TSA); 2008, p87-88, 2p