Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Chiu Hsien-Kuang"'
Autor:
K.-Y. Roy Wong, Chen Po-Chih, C. B. Wu, Ching-Ray Chen, C. W. Hsiung, Ming-Huei Lin, F. J. Yang, Liao Yan-Jie, M. W. Tsai, Yani Lai, Chiu Hsien-Kuang, Tom Tsai, Man-Ho Kwan, Sheng-Da Liu, Burn Jeng Lin, Chang Yu-Chi, Jan-Wen You, Alex Kalnitsky, Chen-Shien Chen, M.-H. Chang, J. L. Yu, L. Y. Tsai, Yu-Syuan Lin, P.-C. Liu, Ru-Yi Su, Fu-Wei Yao, H. C. Tuan, L. C. Chen, Haw-Yun Wu, K.-L. Chiu, Chia-Shiung Tsai, Chung-Yi Yu, S.-P. Wang, G. P. Lansbergen, Chiang Chen-Hao
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
CMOS-compatible 100 V / 650 V enhancement-mode high electron mobility transistors (E-HEMTs) and 650 V depletion-mode MISFET (D-MISFET) are fabricated on 6-inch GaN-on-Si wafers. These devices show excellent power converter switching performances. Bot
Autor:
P. C. Chen, Chang Yu-Chi, Haw-Yun Wu, C. W. Hsiung, C. B. Wu, J. L. Tsai, Alex Kalnitsky, Yu-Syuan Lin, J. L. Yu, Fu-Wei Yao, Ru-Yi Su, M. W. Tsai, Yani Lai, Man Ho Kwan, Chung-Yi Yu, Ming-Huei Lin, M.-H. Chang, Chiu Hsien-Kuang, S.-P. Wang, Lin Hsing-Chih, G. P. Lansbergen, P.-C. Liu, King-Yuen Wong, L. C. Chen, Ching-Ray Chen, Wu Cheng-Ta, F. J. Yang, H. C. Tuan
Publikováno v:
2014 IEEE International Electron Devices Meeting.
CMOS-compatible 100/650 V enhancement-mode FETs and 650 V depletion-mode MISFETs are fabricated on 6-inch AlGaN/GaN-on-Si wafers. They show high breakdown voltage and low specific on-resistance with good wafer uniformity. The importance of epitaxial
Autor:
C. W. Hsiung, Chia-Shiung Tsai, C. L. Tsai, J. L. Yu, Chou Chien-Chih, Chiu Hsien-Kuang, Ping Chen Chen, King-Yuen Wong, F. J. Yang, H. C. Tuan, C. J. Yu, Sheng-Da Liu, Fu-Wei Yao, Chung-Hao Tsai, Yu-Syuan Lin, Ru-Yi Su, Xiaomeng Chen, Alex Kalnitsky, G. P. Lansbergen
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
In this paper, the reliable SiN x /AlGaN/GaN MISHEMTs on silicon substrate with improved trap-related characteristics have been well demonstrated. The devices with our proposed treatment method showed less deep-level traps and more Si surface donors
Autor:
Yu-Syuan Lin, Alex Kalnitsky, Ru-Yi Su, C. W. Hsiung, P.-C. Liu, Ming-Huei Lin, Chiu Hsien-Kuang, F. J. Yang, H. C. Tuan, King-Yuen Wong, S. D. Liu, J. L. Yu, Fu-Wei Yao, C. J. Yu, Xiaomeng Chen, C. L. Tsai, Yani Lai, Chia-Shiung Tsai, Ching-Ray Chen, Chen Po-Chih, G. P. Lansbergen, Chung-Yi Yu, Chiang Chen-Hao
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
CMOS-compatible GaN-on-silicon technology with excellent D-mode MISHFET performance is realized. A low specific contact resistance R c (0.35 Ω-mm) is achieved by Au-free process. MIS-HFET with a gate-drain distance (L GD ) of 15 μm exhibits a large
Autor:
Hun-Jan Tao, Fang-Cheng Chen, Chiu Hsien-Kuang, Chenming Hu, Yee-Chia Yeo, C.H. Chen, Chi-Chuang Lee, Chi-Chun Chen, Chang-Yun Chang, Huan-Tsung Huang, Cheng-Chuan Huang, Mong-Song Liang, Fu-Liang Yang, Hao-Yu Chen
Publikováno v:
Digest. International Electron Devices Meeting.
Low leakage and low active-power 25 nm gate length C-MOSFETs are demonstrated for the first time with a newly proposed Omega-(/spl Omega/) shaped structure, at a conservative 17-19 /spl Aring/ gate oxide thickness, and with excellent hot carrier immu