Thermal characterization using optical methods of AlGaN/GaN HEMTs on SiC substrate in RF operating conditions

Autor: Olivier Jardel, Dominique Carisetti, Chistophe Gaquiere, Laurent Brunel, Yves Mancuso, Lény Baczkowski, Franck Vouzelaud, Myriam Moreau, Jean-Claude Jacquet

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2015, 62, pp.3992-3998. ⟨10.1109/TED.2015.2493204⟩
IEEE Transactions on Electron Devices, 2015, 62, pp.3992-3998. ⟨10.1109/TED.2015.2493204⟩

Performance and reliability of wide bandgap high-power amplifiers are correlated with their thermal behavior. Thermal model development and suitable temperature measurement systems are necessary to quantify the channel temperature of devices in real

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https://hal.archives-ouvertes.fr/hal-01348823