Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Chisato Niikura"'
Autor:
Thang Duy Dao, Anh Tung Doan, Satoshi Ishii, Takahiro Yokoyama, Handegård Sele Ørjan, Dang Hai Ngo, Tomoko Ohki, Akihiko Ohi, Yoshiki Wada, Chisato Niikura, Shinsuke Miyajima, Toshihide Nabatame, Tadaaki Nagao
Publikováno v:
Micromachines, Vol 10, Iss 6, p 416 (2019)
We propose and experimentally demonstrate a compact design for membrane-supported wavelength-selective infrared (IR) bolometers. The proposed bolometer device is composed of wavelength-selective absorbers functioning as the efficient spectroscopic IR
Externí odkaz:
https://doaj.org/article/677a68d45a324af19064a96327b04ede
Autor:
Yulu He, Chisato Niikura, Porponth Sichanugrist, Takeaki Sakurai, Makoto Konagai, Ashraful Islam
Publikováno v:
Materials Science in Semiconductor Processing. 164:107605
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::330bdafcf117c4441a9ba655141da00f
https://doi.org/10.1016/j.mssp.2023.107605
https://doi.org/10.1016/j.mssp.2023.107605
Autor:
Lingying Li, Wanli Li, Xuying Liu, Mizuki Tenjimbayashi, Hiroyo Segawa, Chisato Niikura, Tomonobu Nakayama, Takeo Minari
Publikováno v:
Advanced Materials Technologies. 7:2270046
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8efbad7facf095b924887059e2c012c0
https://doi.org/10.1002/admt.202270046
https://doi.org/10.1002/admt.202270046
Autor:
Muhammad Ajmal Khan, Porponth Sichanugrist, Bancha Janthong, Chisato Niikura, Makoto Konagai, Dong-Won Kang
Publikováno v:
Electronic Materials Letters. 12:462-467
We report p-type a-SiOxCy:H thin films which were fabricated by introducing additional Trimethylboron (TMB, B(CH3)3) doping gas into conventional standard p-type a-SiOx:H films. The TMB addition into the condition of p-a-SiOx:H improved optical bandg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22a2914938712a0618b10ea5c1558bd6
https://doi.org/10.1007/s13391-016-4007-y
https://doi.org/10.1007/s13391-016-4007-y
Publikováno v:
The European Physical Journal Applied Physics. 89(No. 1):10101
We fabricated hydrogenated amorphous Si (a-Si:H) passivation layers on the surfaces of Si wafers by using triode-type plasma-enhanced chemical vapor deposition with gas-heating, and discussed high-quality surface passivation for Si heterojunction sol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f4c091dcdb684ce4f2fb1fcb5bdeadf
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100821427
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100821427
Autor:
Toshihide Nabatame, Anh Tung Doan, Tadaaki Nagao, Satoshi Ishii, Shinsuke Miyajima, Takahiro Yokoyama, Dang Hai Ngo, Thang Duy Dao, Akihiko Ohi, Handegård Sele Ørjan, Yoshiki Wada, Tomoko Ohki, Chisato Niikura
Publikováno v:
Micromachines, Vol 10, Iss 6, p 416 (2019)
Micromachines
Volume 10
Issue 6
Micromachines
Volume 10
Issue 6
We propose and experimentally demonstrate a compact design for membrane-supported wavelength-selective infrared (IR) bolometers. The proposed bolometer device is composed of wavelength-selective absorbers functioning as the efficient spectroscopic IR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c7ba106b1fc94ecc2541b07d52c191a
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100799761
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100799761
Autor:
Akihisa Matsuda, Chisato Niikura
Publikováno v:
physica status solidi (a). 207:521-524
We proposed a multi-hollow discharge-based plasma-enhanced chemical vapor deposition (PECVD) technique with gas-flow control for preparation of highly stable a-Si:H films at high rates. The conditions for multi-hollow plasma production have been opti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fc6cca791040c0abec6168488fa167c
https://doi.org/10.1002/pssa.200982844
https://doi.org/10.1002/pssa.200982844
Publikováno v:
Japanese Journal of Applied Physics. 46:3052-3058
We present guiding principles for preparing high-quality microcrystalline silicon (µc-Si:H) with regard to film precursors and to their reactions on film-growing surfaces, in which, apart from the temperature, the contributions of short-lifetime rea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18e2703f0865b1c7a69cd2261955602f
https://doi.org/10.1143/jjap.46.3052
https://doi.org/10.1143/jjap.46.3052
Publikováno v:
Surface and Coatings Technology. 201:5463-5467
We present guiding principles for obtaining high-quality microcrystalline silicon (μc-Si:H) films with regard to film-precursors and to their reactions on the film-growing surface, in which the contribution of short lifetime reactive species to film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3860ba64ce5cbcdd5c03877ea38cae20
https://doi.org/10.1016/j.surfcoat.2006.07.009
https://doi.org/10.1016/j.surfcoat.2006.07.009
Publikováno v:
Solar Energy Materials and Solar Cells. 90:3223-3231
We have developed a novel technique for large-area high rate growth of microcrystalline silicon films by plasma-enhanced chemical vapor deposition, designing a novel cathode with interconnected multi-holes, which leads to produce uniformly flat-distr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60dcddf19cd276bd683cede27c427fa6
https://doi.org/10.1016/j.solmat.2006.06.036
https://doi.org/10.1016/j.solmat.2006.06.036