Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Chinmoy Nath Saha"'
Autor:
Chinmoy Nath Saha, Abhishek Vaidya, A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Shivam Sharma, Hongping Zhao, Uttam Singisetti
Publikováno v:
Applied Physics Letters. 122
This Letter reports a high performance β-Ga2O3 thin channel MOSFET with T gate and degenerately doped (n++) source/drain contacts regrown by metal organic chemical vapor deposition. Highly scaled T-gate with a gate length of 160–200 nm was fabrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7ad1801f1370a9f4ce80c7358c4e3c1
https://doi.org/10.1063/5.0149062
https://doi.org/10.1063/5.0149062
Publikováno v:
IEEE Electron Device Letters. 42:1444-1447
This letter reports $\beta $ -(AlxGa1-x)2O3/Ga2O3 (AlGaO/GaO) heterostructure FETs (HFETs) with significant improvement of peak transconductance (g m), current and power gain cutoff frequencies. A modulation doping scheme is used to form a two dimens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7b0bd1ed64f55c207419476c6f735dc
https://doi.org/10.1109/led.2021.3104256
https://doi.org/10.1109/led.2021.3104256
Publikováno v:
Applied Physics Letters. 120
In this work, we report a study of the temperature dependent pulsed current voltage and RF characterization of β-(AlxGa1−x)2O3/Ga2O3 hetero-structure FETs (HFETs) before and after silicon nitride (Si3N4) passivation. Under sub-microsecond pulsing,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7eb3e692782bfcd329cb55834c7f8c0
https://doi.org/10.1063/5.0083657
https://doi.org/10.1063/5.0083657
Autor:
Prafful Golani, Chinmoy Nath Saha, Prakash P. Sundaram, Fengdeng Liu, Tristan K. Truttmann, V. R. Saran Kumar Chaganti, Bharat Jalan, Uttam Singisetti, Steven J. Koester
Publikováno v:
Applied Physics Letters. 121:162102
This work reports the quantification of rise in channel temperature due to self-heating in two-terminal SrSnO3 thin film devices under electrical bias. Using pulsed current–voltage (I–V) measurements, thermal resistances of the thin films were de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4d343316e9538545f4968a12be538ce
https://doi.org/10.1063/5.0105962
https://doi.org/10.1063/5.0105962
Publikováno v:
2020 11th International Conference on Electrical and Computer Engineering (ICECE).
Renewable Energy System (RES) integration in existing grids to lessen adverse effects of fossil fuel based generations is advancing in recent years. Regarded as one of the most exciting prospects among RESs, Solar Photovoltaic (PV) system is being us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::460d60d14518fb9b454e46cb4fedc77c
https://doi.org/10.1109/icece51571.2020.9393073
https://doi.org/10.1109/icece51571.2020.9393073
Publikováno v:
2017 IEEE Region 10 Humanitarian Technology Conference (R10-HTC).
In this paper, we propose a two-dimensional analytical model of single material symmetric Double Gate Stack-Oxide Junctionless Field Effect Transistor (DGS-JLFET) for subthreshold region. This model has been investigated and expected to improve subth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc937d64d3adff7f274ffe3c78d32cd2
https://doi.org/10.1109/r10-htc.2017.8288963
https://doi.org/10.1109/r10-htc.2017.8288963