Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Ching-Yin Hong"'
Autor:
Su Li, Zhenhua Wei, Fan Qi, Tzung-I Su, Ching-yin Hong, Dong Pan, Wang Chen, Yanhui Duan, Xueping Chen, Pengfei Cai, Guanghui Hou, Bin Shi
Publikováno v:
OFC
53GB Ge/Si APD TO-CAN ROSA were designed and fabricated with record breaking sensitivities of -23.2dBm at BER=1E-3 for 53GB NRZ and -16.0dBm at BER=2E-4 for 53GB PAM4, respectively.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::830c12e46035ebcc6e26c42a562179f2
https://doi.org/10.1364/ofc.2021.m5a.4
https://doi.org/10.1364/ofc.2021.m5a.4
Autor:
Yanhui Duan, Zengwen He, Wang Chen, Bin Shi, Dong Pan, Tzung-I Su, Guanghui Hou, Pengfei Cai, Fan Qi, Xueping Chen, Rang-Chen Yu, Su Li, Ching-yin Hong
Publikováno v:
OFC
106 Gb/s (53GBaud PAM4) normal-incidence Ge/Si APDs were demonstrated with sensitivities of -16.8 dBm. To our knowledge, this is the best sensitivity reported for 100G APD.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a2b9e1c8a95eeac2a730abd38c624fd
https://doi.org/10.1364/ofc.2020.m3d.2
https://doi.org/10.1364/ofc.2020.m3d.2
Autor:
Su Li, Dong Pan, Guanghui Hou, Wang Chen, Ching-yin Hong, Pengfei Cai, Tzung-I Su, Mengyuan Huang
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 24:1-11
Silicon photonics is considered as one of the promising technologies for high-speed optical fiber communications. Among various silicon photonic devices, germanium on silicon avalanche photodiodes (Ge/Si APDs) have attracted tremendous attention due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46130fd2ed6cf50ae99aba04f358a31a
https://doi.org/10.1109/jstqe.2017.2749958
https://doi.org/10.1109/jstqe.2017.2749958
Autor:
Guanghui Hou, Ching-yin Hong, Dong Pan, Tzung-I Su, Mengyuan Huang, Naichuan Zhang, Pengfei Cai, Su Li
Publikováno v:
OFC
We report a waveguide Ge/Si APD with ultra-high 3dB-bandwidths: 56GHz with a 1310nm responsivity of 1.08A/W and 36GHz with a 1310nm responsivity of 6A/W, which, to our knowledge, are the best performance among all reported APD devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38a9340b995a43cbabac59e686a7da2c
https://doi.org/10.1364/ofc.2018.w4d.6
https://doi.org/10.1364/ofc.2018.w4d.6
Publikováno v:
OFC
We demonstrate a silicon photonic platform for 400G data center 500m to 120km applications. The silicon platform has successfully integrated a variety of C-band and O-band passive and active optical components, including broad-band edge coupler, pola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::677646af90802c94c37302f6fbde6ebc
https://doi.org/10.1364/ofc.2018.m3f.4
https://doi.org/10.1364/ofc.2018.m3f.4
Autor:
Wang Chen, Su Li, Liangbo Wang, Ching-yin Hong, Tzung-I Su, Mengyuan Huang, Pengfei Cai, Dong Pan
Publikováno v:
OFC
Owing to the breakthrough of Ge/Si avalanche photodiode, we developed a cost effective 25G APD TO-can solution for various 100G applications including 100G-PON, 5G wireless, and data center applications with PAM4 and DMT modulations.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::677c47403594116feec49ffdddf15e6f
https://doi.org/10.1364/ofc.2017.th3b.3
https://doi.org/10.1364/ofc.2017.th3b.3
Autor:
Su Li, Wang Chen, Dong Pan, Liyuan Zhao, Tzung-I Su, Liangbo Wang, Ching-yin Hong, Pengfei Cai, Mengyuan Huang
Publikováno v:
OFC
Our germanium on silicon avalanche photodiodes (Ge/Si APDs) show a 1310nm sensitivity of −22.5dBm at 25.78Gb/s, which is, to our knowledge, the best sensitivity in reported 25Gb/s avalanche photodiodes.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::037127a8d607618d5316bfc764e651fc
https://doi.org/10.1364/ofc.2016.tu2d.2
https://doi.org/10.1364/ofc.2016.tu2d.2
Autor:
Jurgen Michel, Lionel C. Kimerling, Ching-yin Hong, Jifeng Liu, Xiaoman Duan, Ning-Ning Feng, Lirong Zeng
Publikováno v:
IEEE Transactions on Electron Devices. 54:1926-1933
We present a design optimization of a highly efficient light-trapping structure to significantly increase the efficiency of thin-film crystalline silicon solar cells. The structure consists of an antireflection (AR) coating, a silicon active layer, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15f1e7be16876dc7d6306276fe7e68ee
https://doi.org/10.1109/ted.2007.900976
https://doi.org/10.1109/ted.2007.900976
Autor:
Wang Chen, Su Li, Liangbo Wang, Mengyuan Huang, Dong Pan, Nai Zhang, Ching-yin Hong, Pengfei Cai
Publikováno v:
2015 IEEE Photonics Conference (IPC).
We review our recent development of germanium on silicon avalanche photodiodes (Ge/Si APDs). Our Ge/Si APDs, manufactured by a standard CMOS commercial foundry, satisfy the requirements of various optical communication systems from 10Gb/s to 25Gb/s.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae9a16ef44fb071ce4f01e55f93c1f1d
https://doi.org/10.1109/ipcon.2015.7323649
https://doi.org/10.1109/ipcon.2015.7323649
Autor:
Dong Pan, Wang Chen, Su Li, Pengfei Cai, Liangbo Wang, Mengyuan Huang, Tuo Shi, Ching-yin Hong
Publikováno v:
OFC
Our CMOS-foundry mass-produced Ge/Si optoelectronic devices have passed the high temperature accelerated aging test, THB test and HAST test, which demonstrate satisfactory reliability and promising potential for non-hermetic applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0fa84bec70a5de45c6113d22d645469
https://doi.org/10.1364/ofc.2015.m3b.3
https://doi.org/10.1364/ofc.2015.m3b.3