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Autor:
Chi Lang Nguyen, Hung Wei Yu, Ching-Wen Kuan, Shih-Hsuan Tang, Yung-Hsuan Su, Edward Yi Chang
Publikováno v:
2014 IEEE International Conference on Semiconductor Electronics (ICSE2014).
The epitaxial growth of high quality Ge thin films on different materials of In 0.51 Ga 0.49 P and GaAs by ultra high vacuum chemical vapor deposition (UHVCVD) system was studied. The crystallinity of high quality Ge layers on In 0.51 Ga 0.49 P and G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7c937b6558177e16b8e61e0823427b4
https://doi.org/10.1109/smelec.2014.6920908
https://doi.org/10.1109/smelec.2014.6920908
