Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Ching-Huang Lu"'
Autor:
Debasish Dwibedy, Sulagna Dey, Prashant Swarnkar, Patrick Hong, Mitsuyuki Watanabe, Koichiro Hayashi, Jiawei Tao, Chang Siau, Juan Lee, Kapil Verma, Jonathan Huynh, Subodh Taigor, William Mak, Takuya Ariki, Yoshihiko Kamata, Zameer Papasaheb, Hiroyuki Mizukoshi, Takuyo Kodama, Toru Miwa, Norihiro Kamae, Trung Pham, Naoki Ookuma, Ryuji Yamashita, Ching-Huang Lu, Meiling Wei, Tsutomu Higuchi, Hitoshi Miwa, Masahide Matsumoto, Rangarao Samineni, Farookh Moogat, Yuzuru Namai, Yingda Dong, Vivek Saraf, Shunichi Toyama, Muralikrishna Balaga, Aditya Pradhan, Hiroki Yabe, Minoru Yamashita, Sung-En Wang, Kazuhide Yoneya, Ying Yu, Samiksha Agarwal, Gopinath Balakrishnan, Thushara Xavier, Manabu Sakai, Xiaohua Zhang, Yuko Utsunomiya, Yosuke Kato, Sahil Deora, Shuo Chen, Yankang He, Sagar Magia, Akshay Petkar, Hardwell Chibvongodze, Swaroop Kulkarni, Shingo Zaitsu, Toshio Yamamura
Publikováno v:
ISSCC
High floating-gate (FG) to FG coupling and lithography limitations have been preventing 2D-NAND flash from further reduction in die size, (e.g., there is no ISSCC paper discussing a 3b/cell 2D-NAND after 2013 [1,2]). Alternatively, since high-density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::695c61bd386f24bc627c57ec2303193d
https://doi.org/10.1109/isscc.2017.7870328
https://doi.org/10.1109/isscc.2017.7870328
Publikováno v:
Journal of Applied Physics; Sep2010, Vol. 108 Issue 5, p053704-37045, 5p, 1 Diagram, 1 Chart, 4 Graphs
Autor:
G.M.T. Wong, James J. Chambers, Bruce M. Clemens, Michael D. Deal, Wilman Tsai, Prashant Majhi, Mark R. Visokay, Yoshio Nishi, Luigi Colombo, Chi On Chui, Ching-Huang Lu
Publikováno v:
IEEE Electron Device Letters. 26:445-447
In this letter, we investigate a method to adjust the gate work function of an MOS structure by stacking two metals with different work functions. This method can provide work function tunability of approximately 1 eV as the bottom metal layer thickn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f44b42e79c3613f912534f2d70f3ae3
https://doi.org/10.1109/led.2005.851232
https://doi.org/10.1109/led.2005.851232
Publikováno v:
2007 65th Annual Device Research Conference.
In this paper, we demonstrate one possible integration scheme to achieve dual work function metal gates on high-k dielectrics by utilizing bilayer metal electrodes and a selective metal wet etch process. We achieve a ~0.85 eV difference in effective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6f58bd0b638910dd627a03737df0022
https://doi.org/10.1109/drc.2007.4373651
https://doi.org/10.1109/drc.2007.4373651
Autor:
James P. McVittie, Hemanth Jagannathan, Ken Uchida, Paul C. McIntyre, Ching-Huang Lu, Ricardo J. Zednik, Yoshio Nishi
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
Biaxial and uniaxial strained silicon technologies are promising for enhancement of CMOS performance. However, the advantage of uniaxial/biaxial strain over biaxial/uniaxial strain in terms of carrier mobility is not clear, since biaxial and uniaxial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de615909b8c42a3ed92dcd22ce6cfb26
https://doi.org/10.1109/iedm.2004.1419116
https://doi.org/10.1109/iedm.2004.1419116
Publikováno v:
Journal of Applied Physics. 108:053704
The dependence of Pt film thickness and forming gas annealing on the interface fracture properties and interface composition of Ti/Pt bilayer gate electrode films on a HfO2 gate dielectric are reported. These fracture properties and composition resul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc2b899171ed5ca9649b1c827cdcd982
https://doi.org/10.1063/1.3466957
https://doi.org/10.1063/1.3466957
Autor:
Ryan P. Birringer, Michael D. Deal, Gloria M. T. Wong, Bruce M. Clemens, Reinhold H. Dauskardt, Yoshio Nishi, Ching-Huang Lu
Publikováno v:
Journal of Applied Physics. 107:063710
A bilayer metal structure has been demonstrated to adjust the gate work function over the Si band gap. The underlying tuning mechanism is believed to be due to metal interdiffusion based on comparison of work function behavior under different anneal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae4bd091c0e6b4ff2ec862e5637e5cec
https://doi.org/10.1063/1.3326237
https://doi.org/10.1063/1.3326237
Autor:
Uchida, K., Zednik, R., Ching-Huang Lu, Jagannathan, H., McVittie, J., McIntyre, P.C., Nishi, Y.
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p229-232, 4p
Autor:
Ching-Huang Lu, Wong, Gloria M., Deal, Michael D., Tsai, Wilman, Majhi, Prashant, Chi On Chui, Visokay, Mark R., Chambers, James J., Colombo, Luigi, Clemens, Bruce M., Nishi, Yoshio
Publikováno v:
IEEE Electron Device Letters; Jul2005, Vol. 26 Issue 7, p445-447, 3p, 3 Graphs