Zobrazeno 1 - 10
of 119
pro vyhledávání: '"Ching-Fa Yeh"'
Publikováno v:
Journal of Applied Physics; 5/15/2004, Vol. 95 Issue 10, p5788-5794, 7p, 1 Black and White Photograph, 1 Diagram, 10 Graphs
Autor:
Yu-Wu Wang, Horng Long Cheng, Ching Fa Yeh, Tang Hsiang Hu, Jia Chong Ho, Cheng-Chung Lee, Yi Kai Wang, Tan Fu Lei
Publikováno v:
Thin Solid Films. 491:305-310
The study addresses the factors of influence on the active matrix display that is driven by pentacene-based organic thin-film transistors (TFTs). The atmosphere and humidity conditions were found to seriously affect the performance of organic TFTs. A
Autor:
Ching-Fa Yeh, Horng Long Cheng, Tang-Hsiang Hu, Jia-Chong Ho, Yu-Wu Wang, Tan Fu Lei, Cheng-Chung Lee, Yi-Kai Wang
Publikováno v:
Thin Solid Films. 467:215-219
This work concerns the electrical properties and carrier transport behavior of polycrystalline pentacene-based thin film transistors (TFTs) in air and high-vacuum environments. The transistor in a high vacuum outperforms that in air. The dependence o
Publikováno v:
Microelectronic Engineering. 75:352-360
In this study, an efficient approach for the removal of colloidal silica abrasives from the polished copper surface was proposed and demonstrated. This post-chemical mechanical polishing (CMP) cleaning process combines a buffing process with dilute H
Publikováno v:
Journal of Applied Physics. 95:5788-5794
This work examines the effects of grain boundaries on the performance and hot-carrier reliability of excimer-laser-annealed polycrystalline silicon thin film transistors (poly-Si TFTs) before and after NH3 plasma treatment. Self-aligned poly-Si TFTs,
Autor:
Chih-Min Hsieh, Chih-Wen Hsiao, H. Kaneko, H. Aomi, Shiuan-Jeng Lin, Ching-Fa Yeh, Toshio Kusumi, Bau-Tong Dai, Ming-Shih Tsai
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 17:214-220
Cleanroom contamination and its impact on the performance of devices are beginning to be investigated due to the increasing sensitivity of the semiconductor manufacturing process to airborne molecular contamination (AMC). A clean bench was equipped w
Publikováno v:
Applied Surface Science. 216:46-53
Post chemical mechanical polishing (CMP) cleaning is a key process for copper (Cu) CMP in dual damascene interconnection technology. During the post CMP cleaning, it is an important issue to minimize organic and Cu contamination residues on the diele
Autor:
Darren Chi-Hsiang Chen, Cheng-Hong Liu, Chung Liu, Tai-Ju Chen, Cheng-Yu Lu, Ching-Fa Yeh, Su-Tseng Lee
Publikováno v:
Japanese Journal of Applied Physics. 41:6119-6126
Low-temperature (~300°C) N2O-plasma post-treatment for liquid-phase-deposited (LPD) gate oxide has been proposed for the first time. This treatment successfully takes the place of conventional furnace annealing in O2 ambient. Results of physicochemi
Publikováno v:
Microelectronic Engineering. 48:235-238
For nonvolatile memory applications, a novel oxide grown on polysilicon by anodic oxidation (anodic polyoxide) is first investigated. In this work, the electrical characteristics of anodic polyoxide is discussed and compared with the conventional the
Publikováno v:
Journal of The Electrochemical Society. 146:2294-2299
This work develops an alternative method, selective liquid-phase deposition (S-LPD), to fabricate contact holes instead of reactive ion etching. In preliminary experiments, deep n + /p junction diodes with contact holes prepared by S-LPD exhibit much