Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Ching-Chieh Shih"'
Autor:
Demiéville, P.
Publikováno v:
Revue Bibliographique de Sinologie, 1962 Jan 01. 8, 416-417.
Externí odkaz:
https://www.jstor.org/stable/24608751
Publikováno v:
Materials Today Physics. 14:100225
Currently, defects existing in materials and at the interface are the main bottlenecks limiting the manufacture of high-performance electron devices, especially semiconductor devices where the performance and reliability are affected by these defects
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::614c45af480aa2595d325c7d7eaca43b
https://doi.org/10.1016/j.mtphys.2020.100225
https://doi.org/10.1016/j.mtphys.2020.100225
Autor:
Kuo Hsi Yen, Jenn-Fang Chen, Ching Chieh Shih, Yeong Shyang Lee, Ming Ta Hsieh, Hsiao-Wen Zan, Chih Hsien Chen, Chan Ching Chang
Publikováno v:
Japanese Journal of Applied Physics. 47:8714-8718
Detailed admittance spectroscopy was performed on a metal–silicon nitride–hydrogenated amorphous silicon (MIAS) structure. On the basis of the properties of hydrogenated amorphous silicon (a-Si:H), three simplified equivalent circuit models under
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e8f827c3c2460aafd1f931423dda301
https://doi.org/10.1143/jjap.47.8714
https://doi.org/10.1143/jjap.47.8714
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 7:347-350
We have studied the time-dependence degradation of ON current of amorphous silicon thin-film transistors (a-Si:H TFTs), which is a function of stress duration, stress temperature, and stress bias. A simple method with stretched-exponential equation a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ce4525b4227e0cf383d1c643065c684
https://doi.org/10.1109/tdmr.2007.901068
https://doi.org/10.1109/tdmr.2007.901068
Autor:
Ming-Hsien Lee, Ting-Chang Chang, Chia-Sheng Lin, Jim-Shone Chen, Hung Wei Li, Fu-Yen Jian, Ching-Chieh Shih, Tien-Yu Hsieh, Shih-Ching Chen, Te-Chih Chen
Publikováno v:
IEEE Electron Device Letters. 31:1413-1415
This letter investigates the degradation mechanism of polycrystalline silicon thin-film transistors with a silicon-oxide-nitride-oxide-silicon structure under off -state stress. During the electrical stress, the hot hole generated from band-to-band t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17e7b0dc85a995db2a75206f09d2148e
https://doi.org/10.1109/led.2010.2079912
https://doi.org/10.1109/led.2010.2079912
Autor:
Chia-Sheng Lin, Ching-Chieh Shih, Jim-Shone Chen, Shih-Ching Chen, Ming-Hsien Lee, Ting-Chang Chang, Fu-Yen Jian, Te-Chih Chen
Publikováno v:
IEEE Electron Device Letters. 30:834-836
This letter studies the nonvolatile memory characteristics of polycrystalline-silicon thin-film transistors with a silicon-oxide-nitride-oxide-silicon (SONOS) structure. As the device was programmed, significant trap-assisted gate-induced drain leaka
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8da77ea67428c59b229104749ae95c0
https://doi.org/10.1109/led.2009.2023827
https://doi.org/10.1109/led.2009.2023827
Autor:
Hung-Chang Sun, Yuan-Jun Hsu, Ching-Chieh Shih, Yen-Ting Chen, Jim-Shone Chen, Ying-Jhe Yang, Chee-Wee Liu, Chun-Yuan Ku, Ching-Fang Huang
Publikováno v:
IEEE Electron Device Letters. 30:368-370
The dynamic stress switching of p-channel polycrystalline-silicon (poly-Si) thin-film transistors from full depletion to accumulation bias creates the high electric field near source/drain (S/D) junctions due to the slow formation of the accumulated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::108e9f1106329c431fe8fd98e1697014
https://doi.org/10.1109/led.2009.2013644
https://doi.org/10.1109/led.2009.2013644
Autor:
Pei-Wen Li, Wei-Ming Liao, Ching-Chieh Shih, Ming-Jinn Tsai, Tine-Shang Kuo, Li-Shyue Lai, Yang-Tai Tseng
Publikováno v:
IEEE Electron Device Letters. 24:454-456
We have investigated the effect of substrate biasing on the subthreshold characteristics and noise levels of Si/Si/sub 1-x/Ge/sub x/ (x=0,0.15,0.3) heterostructure MOSFETs. A detailed analysis of the dependence of threshold voltage, off-state current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24a74016a4217084abd54e92efa330f3
https://doi.org/10.1109/led.2003.814023
https://doi.org/10.1109/led.2003.814023
Comprehensive study of bias temperature instability on polycrystalline silicon thin-film transistors
Autor:
Yuan-Jun Hsu, Yit-Tsong Chen, Ching-Fang Huang, Hung-Chang Sun, Ching-Chieh Shih, J.-S. Chen, Chee-Wee Liu, King-Chuen Lin
Publikováno v:
2008 9th International Conference on Solid-State and Integrated-Circuit Technology.
The negative and positive bias temperature instabilities are investigated on p-channel and n-channel TFTs with four different combinations. The stress-induced hump in the subthreshold region is observed for PBTI on p-channel TFTs and NBTI on n-channe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b2adcf57f66c65dfd0355a8a442fd08
https://doi.org/10.1109/icsict.2008.4734622
https://doi.org/10.1109/icsict.2008.4734622
Autor:
Ching-Chieh Shih, 石靖節
91
The fabrication of Si1-XGeX MOSFET Abstract We have investigated the nMOSFET and pMOSFET with strain Si1-xGex/ Si heterostructure channels formed. The experimental results promise the potential of SiGe heterostructure MOSFET in CMOS applicati
The fabrication of Si1-XGeX MOSFET Abstract We have investigated the nMOSFET and pMOSFET with strain Si1-xGex/ Si heterostructure channels formed. The experimental results promise the potential of SiGe heterostructure MOSFET in CMOS applicati
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/08347575822759924381
