Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation

Autor: Chia-Hsun Wu, Ping-Cheng Han, Quang Ho Luc, Ching-Yi Hsu, Ting-En Hsieh, Huan-Chung Wang, Yen-Ku Lin, Po-Chun Chang, Yueh-Chin Lin, Edward Yi Chang

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 6, Pp 893-899 (2018)

A normally-OFF GaN metal-insulator-gate high electron mobility transistors with fluorine doped gate insulator has been fabricated using standard ion implantation technique. Fluorine ions with negative charges were doped lightly into both the gate ins

Externí odkaz: https://doaj.org/article/56af2a5b502a41ebb7cea73bc5646100

Environmental Risk Perception and Preventive Behavior during the COVID-19 Pandemic in Central Taiwan

Autor: Jen-Chih Chao, Ching-Yi Hsu, Kuo-Wei Hsu

Publikováno v: International Journal of Environmental Research and Public Health, Vol 18, Iss 9920, p 9920 (2021)
International Journal of Environmental Research and Public Health
Volume 18
Issue 18

Due to traffic and industrial and seasonal air pollution, wearing masks outside the home has long been a daily habit for many people in Taiwan. After the emergence of the novel coronavirus (COVID-19), which has an incubation period of up to 14 days,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c06630c84cf6f344c0866fa31b948e7c
https://www.mdpi.com/1660-4601/18/18/9920

Self-monitored versus supervised walking programs for older adults.

Autor: Ching-Yi Hsu, Hsin-Hsien Wu, Hung-En Liao, Tai-Hsiang Liao, Shin-Chang Su, Pay-Shin Lin, Hsu, Ching-Yi, Wu, Hsin-Hsien, Liao, Hung-En, Liao, Tai-Hsiang, Su, Shin-Chang, Lin, Pay-Shin

Publikováno v: Medicine; 4/23/2021, Vol. 100 Issue 16, p1-7, 7p

Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) Substrate

Autor: Sa Hoang Huynh, Ching Yi Hsu, Yu Chih Hung, Yung Yi Tu, Deepak Anandan, Edward Yi Chang, Chien Ting Wu, Minh Thien Huu Ha, Ramesh Kumar Kakkerla, Hung Wei Yu, Chun Jung Su

Publikováno v: Journal of Electronic Materials. 47:1071-1079

High-density (∼ 80/um2) vertical InAs nanowires (NWs) with small diameters (∼ 28 nm) were grown on bare Si (111) substrates by means of two-step metal organic chemical vapor deposition. There are two critical factors in the growth process: (1) a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fbdb6a62397f86480ff0409ec7c97722
https://doi.org/10.1007/s11664-017-5878-x

The Impact of Employees' Personalities and Managers' Leadership Styles on Job Involvement and Performance-Using Company W As An Example

Autor: Ching-Yi Hsu, 許靜宜

107

Externí odkaz: http://ndltd.ncl.edu.tw/cgi-bin/gs32/gsweb.cgi/login?o=dnclcdr&s=id=%22107NCHU5457025%22.&searchmode=basic