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pro vyhledávání: '"Ching Tai Li"'
Autor:
Ching-tai Li, 李慶泰
95
Several problems related with GaN-based bipolar transistors result in difficulties to fabricate GaN-based HBTs with good device characteristics. The major problems are the Schottky-like Ohmic contacts on p-GaN and the leakage paths from the t
Several problems related with GaN-based bipolar transistors result in difficulties to fabricate GaN-based HBTs with good device characteristics. The major problems are the Schottky-like Ohmic contacts on p-GaN and the leakage paths from the t
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/24445140179971722879
Publikováno v:
Journal of The Electrochemical Society. 158:D264
Localized electrochemical deposition (LECD) was performed by microanode-guided electroplating (MAGE) in two different baths to investigate the effect of solvent on the deposit morphology. One of the baths contained an ordinary aqueous solution prepar
Publikováno v:
Journal of The Electrochemical Society. 157:H381
This work presents dc characteristics (gain and leakage current) of a GaN/InGaN/ZnO npn collector-up heterojunction bipolar transistor (HBT) measured at 300, 200, and 100 K. The GaN-based epilayers of HBT were grown by metallorganic chemical vapor de
Autor:
Kuang-Po Hsueh, Shou Chien Huang, Chun Ju Tun, Wei-Chih Lai, Yue Ming Hsin, Jinn-Kong Sheu, Ching Tai Li
Publikováno v:
Applied Physics Letters. 90:132111
This work investigates the temperature dependence of the current-voltage (I-V) characteristics of n-ZnO∕p-GaN junction diodes. The n-ZnO films were deposited on top of the p-GaN by dc sputtering with subsequent annealings at 500, 600, 700, and 800