Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Ching Hsueh Chiu"'
Autor:
Chih-Chiang Shen, Tsung-Chi Hsu, Yen-Wei Yeh, Chieh-Yu Kang, Yun-Ting Lu, Hon-Way Lin, Hsien-Yao Tseng, Yu-Tzu Chen, Cheng-Yuan Chen, Chien-Chung Lin, Chao-Hsin Wu, Po-Tsung Lee, Yang Sheng, Ching-Hsueh Chiu, Hao-Chung Kuo
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-6 (2019)
Abstract We have studied the characteristics of frequency response at 850-nm GaAs high-speed vertical-cavity surface-emitting lasers (VCSELs) with different kinds of oxide aperture sizes and cavity length using the PICS3D simulation program. Using 5-
Externí odkaz:
https://doaj.org/article/69ef5557451647ae860f01c15d21b30b
Autor:
Tzu-Neng Lin, Svette Reina Merden Santiago, Chi-Tsu Yuan, Kuo-Pin Chiu, Ji-Lin Shen, Ting-Chun Wang, Hao-Chung Kuo, Ching-Hsueh Chiu, Yung-Chi Yao, Ya-Ju Lee
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Abstract Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An e
Externí odkaz:
https://doaj.org/article/84637e9ed34047bf8788a2fa47890714
Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband Photodetection
Autor:
Dung-Sheng Tsai, Ping-Yu Chiang, Meng-Lin Tsai, Wei-Chen Tu, Chi Chen, Shih-Lun Chen, Ching-Hsueh Chiu, Chen-Yu Li, Wu-Yih Uen
Publikováno v:
Micromachines, Vol 11, Iss 9, p 812 (2020)
This work demonstrates a self-powered and broadband photodetector using a heterojunction formed by camphor-based chemical vaper deposition (CVD) bilayer graphene on p-Si substrates. Here, graphene/p-Si heterostructures and graphene layers serve as ul
Externí odkaz:
https://doaj.org/article/8ca3ad1d6b744e7c99662dc5bc7f4f92
Autor:
Chih-Chiang Shen, Yun-Ting Lu, Yen-Wei Yeh, Cheng-Yuan Chen, Yu-Tzu Chen, Chin-Wei Sher, Po-Tsung Lee, Ya-Hsuan Shih, Tien-Chang Lu, Tingzhu Wu, Ching-Hsueh Chiu, Hao-Chung Kuo
Publikováno v:
Crystals, Vol 9, Iss 4, p 187 (2019)
In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by
Externí odkaz:
https://doaj.org/article/489faa0ebb1a40f48c41176b56847e83
Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband Photodetection
Autor:
Wu Yih Uen, Shih-Lun Chen, Ching Hsueh Chiu, Chi Chen, Ping Yu Chiang, Meng-Lin Tsai, Chen Yu Li, Dung-Sheng Tsai, Wei Chen Tu
Publikováno v:
Micromachines
Volume 11
Issue 9
Micromachines, Vol 11, Iss 812, p 812 (2020)
Volume 11
Issue 9
Micromachines, Vol 11, Iss 812, p 812 (2020)
This work demonstrates a self-powered and broadband photodetector using a heterojunction formed by camphor-based chemical vaper deposition (CVD) bilayer graphene on p-Si substrates. Here, graphene/p-Si heterostructures and graphene layers serve as ul
Autor:
Tzu Neng Lin, Septem P. Caigas, Svette Reina Merden Santiago, Ji-Lin Shen, Ching Hsueh Chiu, Hao-Chung Kuo, Chi-Tsu Yuan
Publikováno v:
RSC Advances. 8:15399-15404
We propose a tunnel-injection structure, in which WS2 quantum dots (QDs) act as the injector and InGaN/GaN quantum wells (QWs) act as the light emitters. Such a structure with different barrier thicknesses has been characterized using steady-state an
Autor:
Ya Ju Lee, Yung Chi Yao, Ji-Lin Shen, Svette Reina Merden Santiago, Ching Hsueh Chiu, Ting Chun Wang, Tzu Neng Lin, Kuo Pin Chiu, Hao-Chung Kuo, Chi-Tsu Yuan
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
Scientific Reports
Scientific Reports
Graphene quantum dots (GQDs) with an average diameter of 3.5 nm were prepared via pulsed laser ablation. The synthesized GQDs can improve the optical and electrical properties of InGaN/InAlGaN UV light emitting diodes (LEDs) remarkably. An enhancemen
Autor:
Tsung Chi Hsu, Hon Way Lin, C. Y. Chen, Hsien Yao Tseng, Yun Ting Lu, Chien-Chung Lin, Po-Tsung Lee, Hao-Chung Kuo, Ching Hsueh Chiu, Chao-Hsin Wu, Chieh Yu Kang, Yen Wei Yeh, Yu Tzu Chen, Yang Sheng, Chih Chiang Shen
Publikováno v:
Nanoscale Research Letters
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-6 (2019)
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-6 (2019)
We have studied the characteristics of frequency response at 850-nm GaAs high-speed vertical-cavity surface-emitting lasers (VCSELs) with different kinds of oxide aperture sizes and cavity length using the PICS3D simulation program. Using 5-μm oxide
Autor:
Akhil Ajay, Nazmul Arefin, Francesco Bertazzi, John D. Bullough, Martin D.B. Charlton, Chi-Feng Chen, Tzung-Te Chen, Yuk Fai Cheung, Ching-Hsueh Chiu, Hoi Wai Choi, Pei-Ting Chou, Chun-Fan Dai, Carlo De Santi, Houqiang Fu, Han-Kuei Fu, Michele Goano, Hideki Hirayama, Ray-Hua Horng, Run Hu, C.-Y. Huang, JianJang Huang, Tadakazu Ikenaga, S.M. Islam, D. Jena, Matthew H. Kane, Yulia Kotsar, Richard Kotschenreuther, Hao-Chung Kuo, Chun-Feng Lai, Yu-Pin Lan, Wonseok Lee, Zhen-Yu Li, Chien-Chung Lin, Chia-Feng Lin, Da-Wei Lin, Xiaobing Luo, Zetao Ma, Koh Matsumoto, Gaudenzio Meneghesso, Matteo Meneghini, Akira Mishima, Eva Monroy, Guanxi Piao, V. Protasenko, Jae-Hyun Ryou, James Speck, Linas Svilainis, Toshiya Tabuchi, Alberto Tibaldi, Hiroki Tokunaga, Yuji Tomita, Akinori Ubukata, Marco Vallone, A. Verma, J. Verma, Giovanni Verzellesi, Chien-Ping Wang, Yuh-Renn Wu, Zhanchao Wu, Dong-Sing Wuu, Zhiguo Xia, Yoshiki Yano, Wen-Yung Yeh, Enrico Zanoni, Yuji Zhao, Qiandong Zhuang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51c34adff7c0af64083c0edb749de70f
https://doi.org/10.1016/b978-0-08-101942-9.01002-9
https://doi.org/10.1016/b978-0-08-101942-9.01002-9