Zobrazeno 1 - 10
of 269
pro vyhledávání: '"Ching‐Hwa Ho"'
Publikováno v:
Advanced Science, Vol 11, Iss 38, Pp n/a-n/a (2024)
Abstract Anisotropic optical 2D materials are crucial for achieving multiple‐quanta functions within quantum materials, which enables the fabrication of axially polarized electronic and optoelectronic devices. In this work, multiple excitonic emiss
Externí odkaz:
https://doaj.org/article/4c9b29566c3f494f809c5ead60c3ad9b
Publikováno v:
Materials Today Advances, Vol 22, Iss , Pp 100498- (2024)
Band gap engineering is crucial in the development of two-dimensional layered materials in nanoelectronics, optoelectronics, and photonics fields. In this study, we present characteristics of layered SnS2(1-x)Se2(x) (0 ≤ x ≤ 1) ternary alloys gro
Externí odkaz:
https://doaj.org/article/0f0608d03f21433794470917eab9e3d4
Publikováno v:
Materials Today Advances, Vol 21, Iss , Pp 100450- (2024)
The crystal structures and optical properties of full-series multilayered GaTe1−xSx (0 ≤ x ≤ 1) are examined. The results reveal that the monoclinic (M) phase dominates for 0 ≤ x ≤ 0.4, and the hexagonal (H) phase dominates for 0.425 ≤ x
Externí odkaz:
https://doaj.org/article/e33624d7221a484fa5d73dccb2ac2f25
Publikováno v:
JACS Au, Vol 4, Iss 1, Pp 58-71 (2023)
Externí odkaz:
https://doaj.org/article/35bbc0662c5b4005aaed96d3c3296c01
Autor:
Ching-Hwa Ho, Mason L. Valentine, Zhijie Chen, Haomiao Xie, Omar Farha, Wei Xiong, Francesco Paesani
Publikováno v:
Communications Chemistry, Vol 6, Iss 1, Pp 1-9 (2023)
Abstract Metal-organic frameworks (MOFs) are a class of materials with diverse chemical and structural properties, and have been shown to effectively adsorb various types of guest molecules. The mechanism of water adsorption in NU-1500-Cr, a high-per
Externí odkaz:
https://doaj.org/article/b66177a0275b4fd195c611c69545d4b4
Publikováno v:
npj 2D Materials and Applications, Vol 7, Iss 1, Pp 1-14 (2023)
Abstract Two-dimensional layered gallium monochalcogenide (GaX, where X = S, Se, Te) semiconductors possess great potential for use in optoelectronic and photonic applications, owing to their direct band edge. In this work, the structural and optical
Externí odkaz:
https://doaj.org/article/4fe4f82dfa8943c69a3a66be66f10c00
Publikováno v:
Materials Today Advances, Vol 18, Iss , Pp 100379- (2023)
Two-dimensional (2D) semiconductors with black phosphorus (BP) structure have recently received considerable attention on the realization of polarized optoelectronic device, axial-dependent carrier transport, and asymmetric 2D electronic and energy d
Externí odkaz:
https://doaj.org/article/950044cf358e44ff9c8174a050013b55
Autor:
Ewa Żuberek, Martyna Majak, Jakub Lubczyński, Joerg Debus, Kenji Watanabe, Takashi Taniguchi, Ching-Hwa Ho, Leszek Bryja, Joanna Jadczak
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract Monolayers of transition-metal dichalcogenides with direct band gap located at the binary $$K_{-}/K_{+}$$ K - / K + points of the Brillouin zone are promising materials for applications in opto- and spin-electronics due to strongly enhanced
Externí odkaz:
https://doaj.org/article/9ea144d0eafe4a88a6c4db0ffb797032
Autor:
Qianfan Nie, Caifang Gao, Feng-Shou Yang, Ko-Chun Lee, Che-Yi Lin, Xiang Wang, Ching-Hwa Ho, Chen-Hsin Lien, Shu-Ping Lin, Mengjiao Li, Yen-Fu Lin, Wenwu Li, Zhigao Hu, Junhao Chu
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-9 (2021)
Abstract Recently, researchers have focused on optoelectronics based on two-dimensional van der Waals materials to realize multifunctional memory and neuron applications. Layered indium selenide (InSe) semiconductors satisfy various requirements as p
Externí odkaz:
https://doaj.org/article/43e82bac18184adb98152506e92765a3
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-10 (2021)
Abstract Band-edge excitons of few-layer nickel phosphorous trisulfide (NiPS3) are characterized via micro-thermal-modulated reflectance (μTR) measurements from 10 to 300 K. Prominent μTR features of the A exciton series and B are simultaneously de
Externí odkaz:
https://doaj.org/article/bfcce096671041cfb213c7a7b52d021a