Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Ching‐En Tsai"'
Autor:
Yu‐Che Lin, Chung‐Hao Chen, Bing‐Shiun Tsai, Ting‐Fang Hsueh, Cheng‐Si Tsao, Shaun Tan, Bin Chang, Yu‐Ning Chang, Ting‐Yi Chu, Ching‐En Tsai, Cheng‐Sheng Chen, Yang Yang, Kung‐Hwa Wei
Publikováno v:
Advanced Functional Materials. :2215095
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::164f5fe6f4a863ffc396813972d8a75b
https://doi.org/10.1002/adfm.202215095
https://doi.org/10.1002/adfm.202215095
Autor:
Hao-Chung Kuo, Ching En Tsai, Jung Tsung Hsu, Min Ying Tsai, Te Chung Wang, Jer−Ren Yang, Tien-Chang Lu
Publikováno v:
Japanese Journal of Applied Physics. 45:3560-3563
We reports a study of InGaN multiple quantum dot layers. Using the in-situ SiNx treatment process, InGaN multiple quantum dot layers were successfully developed. The InGaN multiple quantum dot layers were constructed with SiNx dot mask layers, InGaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bed76678b3519fe7e7e868391b58cefc
https://doi.org/10.1143/jjap.45.3560
https://doi.org/10.1143/jjap.45.3560
Autor:
Tsin Dong Lee, Hao-Chung Kuo, Jim Y. Chi, Te Chung Wang, Min Ying Tsai, Tien-Chang Lu, Zheng Hong Lee, Ching En Tsai, Chang Cheng Chuo
Publikováno v:
Journal of Crystal Growth. 287:582-585
We report high output power from AlInGaN multiple quantum well (MQW) ultraviolet light-emitting diodes. The high Al containing cladding layer, electron blocking layer and p-contact layer were chosen for transparency at 365 nm to reduce the internal a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d074dacdef8ea73a46b7577760a81ff6
https://doi.org/10.1016/j.jcrysgro.2005.10.141
https://doi.org/10.1016/j.jcrysgro.2005.10.141
Autor:
Chang-Cheng Chuo, Chien-Ping Lee, Ching-En Tsai, Chun-Ju Tun, Gou-Chung Chi, Te-Chung Wang, B. C. Lee, Jim Y. Chi, Ru-Chin Tu
Publikováno v:
Japanese Journal of Applied Physics. 43:L264-L266
This study examined how the duration of SiNx treatment on an underlying GaN layer affects the optical property, surface morphology and density of following InGaN quantum dots (QDs). InGaN QDs with extremely high density of near 3×1011 cm-2 exhibited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e378f2c4fac1bf437e979137adafbca5
https://doi.org/10.1143/jjap.43.l264
https://doi.org/10.1143/jjap.43.l264
Autor:
Gou-Chung Chi, Yu-Mei Fan, Chun-Ju Tun, Chien-Ping Lee, Ching-En Tsai, Chang-Cheng Chuo, Te-Chung Wang, Ru-Chin Tu, B. C. Lee, Shyi-Ming Pan
Publikováno v:
Applied Physics Letters. 83:3608-3610
Near-ultraviolet 400-nm InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with and without an in situ rough SiNx interlayer inserted into the n-GaN underlying layer were grown on c-face sapphire substrates by metalorganic vapor phase epita
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb76bfc91097f698e9a3acb7cb6c3c41
https://doi.org/10.1063/1.1622441
https://doi.org/10.1063/1.1622441
Autor:
Ru-Chin Tu, Te-Chung Wang, Gou-Chung Chi, Ching-En Tsai, Chang-Cheng Chuo, Shyi-Ming Pan, Jinn-Kong Sheu, Chun-Ju Tun
Publikováno v:
IEEE Photonics Technology Letters. 15:1342-1344
The 400-nm near-ultraviolet InGaN-GaN multiple quantum well light-emitting diodes (LEDs) with Mg-doped AlGaN electron-blocking (EB) layers of various configurations and grown under various conditions, were grown on sapphire substrates by metal-organi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73f0ae5414824ff3e46048d21557a59e
https://doi.org/10.1109/lpt.2003.818240
https://doi.org/10.1109/lpt.2003.818240
Autor:
Hai-Ping Liu, Te-Chung Wang, Gou-Chung Chi, Ru-Chin Tu, Chang-Cheng Chuo, Ching-En Tsai, In-Gann Chen, Jinn-Kong Sheu, Chun-Ju Tun, Shyi-Ming Pan
Publikováno v:
IEEE Photonics Technology Letters. 15:1050-1052
The 410-nm near-ultraviolet (near-UV) InGaN-GaN multiple quantum-wells light-emitting diodes (LEDs) with low-pressure-grown (200 mbar) and high-pressure-grown (400 mbar) Si-doped GaN underlying layers were grown on c-face sapphire substrates by metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42ba5766105150328e2178df3fefca26
https://doi.org/10.1109/lpt.2003.815310
https://doi.org/10.1109/lpt.2003.815310
Autor:
Wei-Hong Kuo, J. K. Sheu, Ching-En Tsai, Chun-Ju Tun, Jim Y. Chi, Te-Chung Wang, Jung-Tsung Hsu, Ru-Chin Tu, Gou-Chung Chi
Publikováno v:
IEEE Electron Device Letters. 24:206-208
InGaN/GaN multiple-quantum-well laser diode (LD) structures, including an Si-doped n/sup +/-In/sub 0.23/Ga/sub 0.77/N/GaN short-period superlattice (SPS) tunneling contact layer, are grown on c-face sapphire substrates by metalorganic vapor-phase epi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9e7a0180cd44e8c21b9a695250afd57
https://doi.org/10.1109/led.2003.810889
https://doi.org/10.1109/led.2003.810889
Publikováno v:
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29dc7a516b0d685a288fa132f1976b73
https://doi.org/10.7567/ssdm.2005.f-3-3
https://doi.org/10.7567/ssdm.2005.f-3-3
Autor:
Ru-Chin Tu, Chang-Cheng Chuo, Shyi-Ming Pan, M., Yu-Mei Fan, M., Ching-En Tsai, Te-Chung Wang, Chun-Ju Tun, Gou-Chung Chi, Bing-Chi Lee, M., Chien-Ping Lee
Publikováno v:
Applied Physics Letters; 10/27/2003, Vol. 83 Issue 17, p3608, 3p, 1 Diagram, 3 Graphs