Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Chin-I Wang"'
Autor:
Chun-Yuan Wang, Chin-I Wang, Sheng-Han Yi, Teng-Jan Chang, Chun-Yi Chou, Yu-Tung Yin, Makoto Shiojiri, Miin-Jang Chen
Publikováno v:
Materials & Design, Vol 195, Iss , Pp 109020- (2020)
Based on the engineering of the TiN capping layer, the tailoring of the crystalline phases and the paraelectric(PE)/antiferroelectric(AFE)/ferroelectric(FE) properties of nanoscale ZrO2 thin films are demonstrated without any post-annealing treatment
Externí odkaz:
https://doaj.org/article/a90ae222d9c743a0a47c750d29acf5cf
Autor:
Chin-I Wang, 王瑾毅
107
Disposition Effect which means the investor’s tendency to sell winning stocks too soon and hold losing stocks too long is one of the behavior economic theory. This theory was propounded by Shefrin and Statman(1985). In past, there are many
Disposition Effect which means the investor’s tendency to sell winning stocks too soon and hold losing stocks too long is one of the behavior economic theory. This theory was propounded by Shefrin and Statman(1985). In past, there are many
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/43444y
Autor:
chin-i wang, 王進義
99
He was Houzhi community building, "the establishment of community life, sense of community, " the development of civil society, the construction of the basis of democracy, so that the light show community organizations, and to sustainable dev
He was Houzhi community building, "the establishment of community life, sense of community, " the development of civil society, the construction of the basis of democracy, so that the light show community organizations, and to sustainable dev
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/67180323572301634787
Autor:
Chin-I Wang, 王欽儀
96
This study investigated the applicability of the new flame retardant for the intumescent fire retardant coating (IFRC) daubed on the top the plywood. Three kinds of flame retardant used herein were: (1) the artificial mesophase graphite powde
This study investigated the applicability of the new flame retardant for the intumescent fire retardant coating (IFRC) daubed on the top the plywood. Three kinds of flame retardant used herein were: (1) the artificial mesophase graphite powde
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/17716001540972172554
Autor:
Yu-Sen Jiang, Kuei-Wen Huang, Sheng-Han Yi, Chin-I Wang, Teng-Jan Chang, Wei-Chung Kao, Chun-Yuan Wang, Yu-Tung Yin, Jay Shieh, Miin-Jang Chen
Publikováno v:
Journal of the European Ceramic Society. 42:6997-7003
Autor:
Chun-Yuan Wang, Chun-Yi Chou, Yu-Tung Yin, Hsin-Chih Lin, Miin-Jang Chen, Teng-Jan Chang, Sheng-Han Yi, Chin-I Wang
Publikováno v:
ACS Applied Electronic Materials. 3:1937-1946
Tailoring of crystalline phases and dielectric properties of ZrO2 thin films are demonstrated by capping a nanoscale TiN layer prepared by plasma-enhanced atomic layer deposition. The in-plane tens...
Autor:
Teng-Jan Chang, Yu-En Jeng, Yu-Sen Jiang, Chin-I Wang, Yu-Ting Chao, Kuei-Wen Huang, Miin-Jang Chen, Yu-Tung Yin, Chao-Hsin Wu
Publikováno v:
Journal of Materials Chemistry C. 9:1401-1409
The ferroelectric (FE) negative capacitance (NC) has emerged as a potential candidate for low-power electronics. In this study, we experimentally demonstrate the capacitance magnification of a paraelectric (PE) HfO2 capacitance (CHfO2) connected in s
Autor:
Chih-Sheng Chang, Hsin-Yang Chen, Miin-Jang Chen, Teng-Jan Chang, Chin-I Wang, Chun-Yuan Wang, Yu-Sen Jiang
Publikováno v:
Journal of Materials Chemistry C. 9:12759-12767
The thickness scaling of the ferroelectric (FE) hafnium zirconium oxide (HZO) down to sub-10 nm is essential in non-volatile memory devices. In this study, high remnant polarization (Pr), low thermal budget, low operation voltage, and high endurance
Autor:
Teng-Jan Chang, Ting Yun Wang, Yu-Sen Jiang, Chun-Yi Chou, Wei-Chung Kao, Chin-I Wang, Miin-Jang Chen, Zheng-da Huang
Publikováno v:
Journal of Materials Chemistry C. 9:8285-8293
The performance enhancements of Si junctionless transistors (JLTs) with a short gate length (LG) below 10 nm by a pronounced ferroelectric (FE) gate dielectric were demonstrated for the first time. A TiN gate with LG = ∼8 nm was defined by helium i
Publikováno v:
ACS Applied Electronic Materials. 2:891-897
The impact of atomic layer bombardment (ALB) was investigated on the aluminum nitride (AlN) passivation layer between the HfO2 gate dielectric and the n-type epitaxial germanium (Ge). The ALB techn...