Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Chin-Hua Hsieh"'
Autor:
Chin-Hua Hsieh, 謝進華
96
本論文主要研究一維鎵基奈米材料的合成、鑑定與應用,共分為以下幾個主題:(1, 2)純氮化鎵、氧化鎵奈米線之合成技術,(3, 4) 一維豆莢狀金-氧化鎵 (Au-Peapodded Gallium Oxide Nanowires)與核
本論文主要研究一維鎵基奈米材料的合成、鑑定與應用,共分為以下幾個主題:(1, 2)純氮化鎵、氧化鎵奈米線之合成技術,(3, 4) 一維豆莢狀金-氧化鎵 (Au-Peapodded Gallium Oxide Nanowires)與核
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/39991331340912967757
Autor:
Chin-Hua Hsieh, 謝進華
91
This study is to evaluate the feasibility and application of (Ta,Ti)NX thin films as diffusion barriers for Cu/Si multilayered systems. The (Ta,Ti)NX films were deposited by radio frequency reactive sputtering from a TaTi target(at.% 50:50) i
This study is to evaluate the feasibility and application of (Ta,Ti)NX thin films as diffusion barriers for Cu/Si multilayered systems. The (Ta,Ti)NX films were deposited by radio frequency reactive sputtering from a TaTi target(at.% 50:50) i
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/13636596915107457171
Autor:
Chin-Hua Hsieh, 謝金樺
89
This paper studies how to hide/embed a piece of secret in a host message which is a binary image. An earlier paper [4] shows that as many as log2(mn+1) bits of secret data can be hidden in an arbitrary mn binary image block by modifying at mo
This paper studies how to hide/embed a piece of secret in a host message which is a binary image. An earlier paper [4] shows that as many as log2(mn+1) bits of secret data can be hidden in an arbitrary mn binary image block by modifying at mo
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/16511431690877277930
Publikováno v:
ACS Nano. 4:1393-1398
Light-scattering properties of individual gold-in-Ga(2)O(3) peapod nanowires and gold-in-Ga(2)O(3) core/shell nanowires were investigated by optical dark-field microscopy. The observed scattering peaks are suggested to result from plasmonic resonance
Publikováno v:
Nano Letters. 8:3288-3292
Coaxial metal-oxide-semiconductor (MOS) Au-Ga2O3-GaN heterostructure nanowires were successfully fabricated by an in situ two-step process. The Au-Ga2O3 core-shell nanowires were first synthesized by the reaction of Ga powder, a mediated Au thin laye
Publikováno v:
Nano Letters. 8:3081-3085
A novel metal-insulator heterostructure made of twinned Ga2O3 nanowires embedding discrete gold particles along the twin boundary was formed through a reaction between gold, gallium, and silica at 800 degrees C during simple thermal annealing. The Au
Autor:
L.-J. Chou, Chin-Hua Hsieh
Publikováno v:
ECS Transactions. 11:45-51
A simple thermal annealing process was carried out to produce the innovative heterostructure of gold-Ga2O3 co-shell nanowires. By changing the growth temperature and the size of the gold catalyst, it is easy to control the growth of pure Ga2O3 or gol
Autor:
Zhong Lin Wang, Chin Hua Hsieh, Daisuke Shindo, Mu Tung Chang, Li Jen Chou, Yasukazu Murakami, Yu-Lun Chueh
Publikováno v:
Advanced Materials. 19:2290-2294
Half-metallic materials, such as CrO2, La0.7Sr0.3MnO3 (LSMO), and Fe3O4 are highly attractive for spintronics applications because of their high spin polarization. Among these materials, magnetite (Fe3O4) is superior to others because of its high Cur
Autor:
L.-J. Chou, Chin-Hua Hsieh
Publikováno v:
ECS Transactions. 6:137-148
1-D Ga2O3-GaN core-shell nanorods were successfully fabricated by two-step synthesis processes. The Ga2O3 nanorods were synthesized by the reaction of Ga with SiO2 at 600{degree sign}C. Subsequently, one dimensional Ga2O3-GaN core-shell nanorods were
Autor:
Li Jen Chou, Yu-Lun Chueh, Mu Tung Chang, Chii-Dong Chen, Lih-Juann Chen, Yann Wen Lan, Yu Chen Lee, Chin Hua Hsieh
Publikováno v:
Small. 3:658-664
Very dense and uniformly distributed nitrogen-doped tungsten oxide (WO(3)) nanowires were synthesized successfully on a 4-inch Si(100) wafer at low temperature. The nanowires were of lengths extending up to 5 mum and diameters ranging from 25 to 35 n