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pro vyhledávání: '"Chin-Hsueh Chou"'
Publikováno v:
physica status solidi c. 11:957-960
Ti/Al/Pt/Au and Ti/Au ohmic contact materials on the N-face surface of oxygen doped GaN (GaN:O) were investigated by measuring the specific contact resistivity (ρc) with respect to annealing temperature. Ti/Au contact showed good ohmic property in c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4328f3778d8dbef3eb1db72540a50a2
https://doi.org/10.1002/pssc.201300469
https://doi.org/10.1002/pssc.201300469
