Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Chin-Hsuan Liao"'
Autor:
CHIN-HSUAN LIAO, 廖金鉉
102
In this study, chemical-soaked SiO2-based resistance switching layers with different Cu-doping concentration have been investigated for resistance random access memory (ReRAM) application. The results point that switching endurance propertie
In this study, chemical-soaked SiO2-based resistance switching layers with different Cu-doping concentration have been investigated for resistance random access memory (ReRAM) application. The results point that switching endurance propertie
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/z2t2b8
Autor:
Yu Ping Hsiao, Wen Luh Yang, Tien-Sheng Chao, Yu-Hsien Lin, Chin Hsuan Liao, Fun Tat Chin, Li Min Lin
Publikováno v:
Solid-State Electronics. 103:190-194
A limited copper (Cu)-source Cu:SiO2 switching layer composed of various Cu concentrations was fabricated using a chemical soaking (CS) technique. The switching layer was then studied for developing applications in resistive random access memory (ReR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bd994736ddada22fedc19a76a962d6d
https://doi.org/10.1016/j.sse.2014.07.014
https://doi.org/10.1016/j.sse.2014.07.014
Publikováno v:
Advanced Materials Research. 893:794-797
Multi-level-cell (MLC) operation of Cu-doped SiOx-based (SiOx:Cu-based) resistance random access memory (ReRAM) has been reported for the first time. For this study, we employed a novel ion bombardment-induced (IB-induced) SiOx:Cu switching layer (SL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab16850ef3b159ecc7838ec289c0e825
https://doi.org/10.4028/www.scientific.net/amr.893.794
https://doi.org/10.4028/www.scientific.net/amr.893.794
Autor:
Wen Luh Yang, Yu-Ping Hsiao, Cheng-Lin Peng, Che-Chi Hsu, Yun-Chung Yang, Yu-Hsien Lin, Yuan Ming Chang, Sheng-Hsien Liu, Li-Min Lin, Chin-Hsuan Liao, Fun-Tat Chin
Publikováno v:
ECS Transactions. 53:223-228
The sol-gel derived technique has been proposed not only to tailor the microstructure of resistive layer but to control the amount of metal during device fabrication for resistive random access memory (ReRAM). Using the sol-gel derived technique can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1cccf95b47bcbfc315012fcd875d922
https://doi.org/10.1149/05303.0223ecst
https://doi.org/10.1149/05303.0223ecst