Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Chin Yuan Ko"'
Autor:
Bill Kiang, Yu-Lin Chu, Jinn-Wen Young, Ming-Yi Wang, Chin-Yuan Ko, Hsi-Yu Kuo, Y. S. Tsai, Chuan-Li Chang, Kenneth Wu
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
In this paper, a mechanism of CDM (Charged-Device Model) — like damage is observed across separated power domain interfaces fabricated with DNW (Deep N-well) processes. This mechanism is modeled and validated by test patterns in a 40nm logic proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::459161c354005a39024f18f2237887aa
https://doi.org/10.1109/irps.2017.7936350
https://doi.org/10.1109/irps.2017.7936350
Autor:
J.Y.-C. Sun, Yung Shun Chen, Shien Yang Wu, Chih Ping Chao, Bi Shiou Chiou, Chin Yuan Ko, Yee Chaung See, Ming Hsung Chang, Kuo Hua Lee, Hung Der Su
Publikováno v:
Japanese Journal of Applied Physics. 42:7232-7237
The breakdown detections of ultrathin oxide (1.4–2 nm) using a fast voltage ramp have been studied. It was found that the breakdown voltage test of deep sub-micron technology requires the reduction of the gate area of test patterns and therefore th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f2703b6fda7ded02b32bb35d5732d8f
https://doi.org/10.1143/jjap.42.7232
https://doi.org/10.1143/jjap.42.7232
Autor:
Chin-Yuan Ko, 葛清元
96
The most challengeable issue when enterprise implementing continuous improvement is how to select appropriate methods. The primary objective of the study is to develop a diagnosis model for enterprises to select improvement methods while intr
The most challengeable issue when enterprise implementing continuous improvement is how to select appropriate methods. The primary objective of the study is to develop a diagnosis model for enterprises to select improvement methods while intr
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/11654099445413349598
Publikováno v:
2004 IEEE International Reliability Physics Symposium. Proceedings.
For drain biased TDDB, hole injection enhanced gate oxide degradation has been discussed and modeled, and the model is in excellent agreement with the experimental data. Although hole injection will degrade gate oxide, lifetime of drain biased TDDB i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::224bb0c5a423d2a5db574eb8352b9beb
https://doi.org/10.1109/relphy.2004.1315403
https://doi.org/10.1109/relphy.2004.1315403
Publikováno v:
7th International Symposium on Plasma- and Process-Induced Damage.
The TDDB under accumulation and inversion mode was investigated. It is shown that the generation probability of soft breakdown dramatically increases with the stress mode changing from accumulation to inversion. In the accumulation stress mode, there
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ce33a1bab2d780f5f7022edccca7c41
https://doi.org/10.1109/ppid.2002.1042609
https://doi.org/10.1109/ppid.2002.1042609
Publikováno v:
7th International Symposium on Plasma & Process-Induced Damage; 2002, p60-63, 4p
Publikováno v:
2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515); 2000, p51-53, 3p
Publikováno v:
Proceedings of the 2004 IEEE International Reliability Physics Symposium; 2004, p589-590, 2p
Conference
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