Výsledky vyhledávání - "Chin Lung Sung"

Proximity effect of electron beam lithography for single-electron transistor fabrication

Autor: Yue Min Wan, Kuo Dong Huang, Chin Lung Sung, Shu Fen Hu

Publikováno v: Applied Physics Letters. 85:3893-3895

In this letter, we shall describe a method, utilizing the proximity effect in electron beam lithography, suitable for fabricating silicon dots and devices, and demonstrate the electronic characteristics of the Si single-electron transistor. The drain

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2aee5675e5310863081b9d4852528719
https://doi.org/10.1063/1.1811803

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Fabrication and electron transport in vertical silicon-silicon nitride-silicon multilayer nano-pillars

Autor: Yue-Min Wan, Hsien-Hsun Yang, Chin-Lung Sung, Shu Fen Hu, Heng-Tien Lin

Publikováno v: 5th IEEE Conference on Nanotechnology, 2005..

We have designed vertical single-electron transistors that consist of a vertical stack of coupled asymmetric quantum wells in a poly-silicon/silicon nitride multilayer nano-pillars configuration with each well having a unique size. A part of surround

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4b93d677a74c658295b47660184806e8
https://doi.org/10.1109/nano.2005.1500825

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Single-electron transistor using self-aligned sidewall spacer gates on silicon-on-insulator nanowire

Autor: Che-Chia Chang, Yung-Chun Wu, Shu Fen Hu, Chin-Lung Sung, Tiao-Yuan Huang

Publikováno v: 2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003..

A dual-gate-controlled single-electron transistor was fabricated by using self-aligned polysilicon sidewall spacer gates on a silicon-on-insulator nanowire. The quantum dot formed by the electric field effect of the dual-gate structure was miniaturiz

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ee14067680a4d5c85d74796a250eb506
https://doi.org/10.1109/nano.2003.1230975

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Room-temperature two-terminal characteristics in silicon nano wires

Autor: W.Z. Wong, Tiao-Yuan Huang, Y.G. Wu, Shu Fen Hu, Chin-Lung Sung, Simon M. Sze, S.S. Liu

Publikováno v: Proceedings of the 2nd IEEE Conference on Nanotechnology.

Quantum effects in silicon nano wires due to 1-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and furt

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::93d4eb191e3fe5fb707fc3e0a840c4f0
https://doi.org/10.1109/nano.2002.1032123

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Interference of charge carrier in a double-dot nanopillar transistor

Autor: Hsien Hsun Yang, Yue Min Wan, Chin Lung Sung, Shu Fen Hu

Publikováno v: Applied Physics Letters. 89:053515

In this study, the authors investigate the mutual interaction of quantized charge carriers in a double-dot nanopillar transistor. By coupling the dots at a distance less than the Fermi wavelength λF, the authors observe full size beats in current-vo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::80c8afc0e02ddce00b916996ebf858e5
https://doi.org/10.1063/1.2240531

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Nanopillar transistors exhibiting single-electron quantum effects at room temperature

Autor: Yue Min Wan, Chin Lung Sung, Shu Fen Hu, Heng Tein Lin

Publikováno v: Applied Physics Letters. 87:123506

A nanoelectronic device consisting of a SiNx∕Si∕SiNx nanopillar and a side electrical gate has been assembled to display single-electron resonance tunneling and Coulomb modulation at 300K. The device features an ultrasmall quantum dot of size ∼

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8104c82094acfbc0894e7f2bd0cec608
https://doi.org/10.1063/1.2056577

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Coulomb blockade oscillations in ultrathin gate oxide silicon single-electron transistors

Autor: Y. C. Chou, Yue Min Wan, Kuo Dong Huang, Shu Fen Hu, Chin Lung Sung

Publikováno v: Journal of Applied Physics. 97:116106

Ultrathin oxide-gated (thickness ∼6nm) point-contact junctions have been fabricated to explore single-electron charging effects in strongly gate-dot-coupled polycrystallinesilicon transistors. Current–voltage (I–V) measurements show periodic cu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::02f8182b691c937e2995a520ce5f22a7
https://doi.org/10.1063/1.1921335

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