Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Chin Lung Sung"'
Publikováno v:
Applied Physics Letters. 85:3893-3895
In this letter, we shall describe a method, utilizing the proximity effect in electron beam lithography, suitable for fabricating silicon dots and devices, and demonstrate the electronic characteristics of the Si single-electron transistor. The drain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aee5675e5310863081b9d4852528719
https://doi.org/10.1063/1.1811803
https://doi.org/10.1063/1.1811803
Publikováno v:
2006 25th International Conference on Microelectronics; 2006, p149-152, 4p
Publikováno v:
5th IEEE Conference on Nanotechnology, 2005..
We have designed vertical single-electron transistors that consist of a vertical stack of coupled asymmetric quantum wells in a poly-silicon/silicon nitride multilayer nano-pillars configuration with each well having a unique size. A part of surround
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b93d677a74c658295b47660184806e8
https://doi.org/10.1109/nano.2005.1500825
https://doi.org/10.1109/nano.2005.1500825
Single-electron transistor using self-aligned sidewall spacer gates on silicon-on-insulator nanowire
Publikováno v:
2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003..
A dual-gate-controlled single-electron transistor was fabricated by using self-aligned polysilicon sidewall spacer gates on a silicon-on-insulator nanowire. The quantum dot formed by the electric field effect of the dual-gate structure was miniaturiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee14067680a4d5c85d74796a250eb506
https://doi.org/10.1109/nano.2003.1230975
https://doi.org/10.1109/nano.2003.1230975
Publikováno v:
Proceedings of the 2nd IEEE Conference on Nanotechnology.
Quantum effects in silicon nano wires due to 1-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and furt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93d4eb191e3fe5fb707fc3e0a840c4f0
https://doi.org/10.1109/nano.2002.1032123
https://doi.org/10.1109/nano.2002.1032123
Publikováno v:
IEEE Transactions on Nanotechnology; Mar2004, Vol. 3 Issue 1, p93-97, 5p
Publikováno v:
Applied Physics Letters. 89:053515
In this study, the authors investigate the mutual interaction of quantized charge carriers in a double-dot nanopillar transistor. By coupling the dots at a distance less than the Fermi wavelength λF, the authors observe full size beats in current-vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80c8afc0e02ddce00b916996ebf858e5
https://doi.org/10.1063/1.2240531
https://doi.org/10.1063/1.2240531
Publikováno v:
Applied Physics Letters. 87:123506
A nanoelectronic device consisting of a SiNx∕Si∕SiNx nanopillar and a side electrical gate has been assembled to display single-electron resonance tunneling and Coulomb modulation at 300K. The device features an ultrasmall quantum dot of size ∼
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8104c82094acfbc0894e7f2bd0cec608
https://doi.org/10.1063/1.2056577
https://doi.org/10.1063/1.2056577
Publikováno v:
Journal of Applied Physics. 97:116106
Ultrathin oxide-gated (thickness ∼6nm) point-contact junctions have been fabricated to explore single-electron charging effects in strongly gate-dot-coupled polycrystallinesilicon transistors. Current–voltage (I–V) measurements show periodic cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02f8182b691c937e2995a520ce5f22a7
https://doi.org/10.1063/1.1921335
https://doi.org/10.1063/1.1921335
Autor:
Shu Fen Hu, Shiue-Shin Liu, Chin-Lung Sung, Tiao-Yuan Huang, Tzong-Jer Yang, Yung-Chun Wu, Wei-Zhe Wong
Publikováno v:
Advanced Materials. 14:736
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a304c9378f1beae984074c9adff0f63
https://doi.org/10.1002/1521-4095(20020517)14:10<736::aid-adma736>3.0.co
https://doi.org/10.1002/1521-4095(20020517)14:10<736::aid-adma736>3.0.co