Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Chin I. Liao"'
Autor:
Chan Lon Yang, Chin Cheng Chien, Stan Yu, Balasubramanian Ramachandran, J.Y. Wu, Chin I. Liao, Chun Yua Chen
Publikováno v:
ECS Transactions. 58:159-162
The selective Epi of high quality with the high Ge of >50% has been demonstrated. The high quality Epi morphology can be obtained by modulating the Epi temperature to < 600C. The diamond shape Epi film with dislocation free can be observed by TEM. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b38895899d8b5597bcec7f09c7eab7b
https://doi.org/10.1149/05807.0159ecst
https://doi.org/10.1149/05807.0159ecst
Publikováno v:
Journal of Composite Materials. 41:3055-3078
Unsaturated polyester filled with coloring agent is commonly used as the surface material of a GFRP yacht and is called a gel-coating layer. The reflection on the gel-coating layer surface will be imperfect if twists and wrinkles exist on the gel-coa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71a001ec60f0294ae425cabc07aa56d8
https://doi.org/10.1177/0021998307082172
https://doi.org/10.1177/0021998307082172
Publikováno v:
Journal of Reinforced Plastics and Composites. 26:1671-1679
This investigation presents three formulae of the material constants. A simple method is applied to determine the material properties of a unidirectional lamina (UD) in the through-thickness direction. The mechanical characteristics of an orthotropic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1386abb0786392d996a11179467e4b9
https://doi.org/10.1177/0731684407081450
https://doi.org/10.1177/0731684407081450
Publikováno v:
Journal of Reinforced Plastics and Composites. 26:377-389
The reflected image on the surface of the fiber-reinforced plastic (FRP) often presents twists and wrinkles. This phenomenon is called print-through phenomenon (PTP) in this investigation and the lines present on the material surface are called print
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c69a2885021de2225da7120cea87af70
https://doi.org/10.1177/0731684406072528
https://doi.org/10.1177/0731684406072528
Autor:
Keh-Ching Huang, Jinsong Tang, T. Fu, R. Kodali, Chan-Lon Yang, S. F. Tzou, V.C. Chang, Yonah Cho, Yi Cheng Chen, Hsiang-Ying Wang, L. Washington, Chin-Cheng Chien, Po-Lun Cheng, Chin-I Liao
Publikováno v:
Semiconductor Science and Technology. 22:S140-S143
Cyclical wet clean in DI-O 3 /SC1/DHF and low temperature bake in HCl/H 2 are presented as effective surface treatments for selective SiGe epitaxial deposition used to fabricate embedded SiGe pMOSFETs. The presented methods are most effective for dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d2f791db19a397d193a14d8ca6ab0e8
https://doi.org/10.1088/0268-1242/22/1/s33
https://doi.org/10.1088/0268-1242/22/1/s33
Autor:
Errol Antonio C. Sanchez, S. F. Tzou, Yonah Cho, Yi Cheng Chen, Tony Fu, Chan Lon Yang, Wen S. Hsu, Chin Cheng Chien, Vincent C Chang, Chin I. Liao, Hou Ren Wu, Po Lun Cheng, Jinsong Tang
Publikováno v:
ECS Transactions. 3:245-248
A thin layer (15A) of Si seed was employed to help nucleate low temperature selective SiGe epitaxial film in recessed source and drain. In combination with pre-epi wet clean and low temperature chemical bake, use of Si seed resulted in improved SiGe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3abb14ca3135690195248a5a079a05bc
https://doi.org/10.1149/1.2355817
https://doi.org/10.1149/1.2355817
Publikováno v:
Computers and Concrete. 3:235-248
This investigation presents an analysis procedure for simulating the compressive behavior of a rectangular concrete column confined by fiber-reinforced plastic (FRP) under uniaxial load. That is, the entire stress-strain curve can be drawn through th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79f313390a83c0c53c992868f46844fa
https://doi.org/10.12989/cac.2006.3.4.235
https://doi.org/10.12989/cac.2006.3.4.235
Publikováno v:
Journal of Materials Science: Materials in Electronics. 17:251-265
A review of the technique of direct growing high-quality InxGa1−xAs or InP buffer layers on GaAs substrates by metal-organic chemical vapor deposition (MOCVD) is given. This low-temperature growth method benefits the improvement of metamorphic devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e09f9c0c0766b757d227c2ec16d944ad
https://doi.org/10.1007/s10854-006-6939-8
https://doi.org/10.1007/s10854-006-6939-8
Publikováno v:
Crystallography Reviews. 12:47-80
This is a review of direct growing high-quality In x Ga1− x As or InP buffer layers on GaAs substrates by metal-organic chemical vapour deposition (MOCVD). This low-temperature growth method benefits the improvement of metamorphic device performanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::290ef2fefceab4ffcfdfa649c6f06028
https://doi.org/10.1080/08893110600664965
https://doi.org/10.1080/08893110600664965
Publikováno v:
Materials Science in Semiconductor Processing. 8:550-554
Gate-recessed delta-doping Al0.2Ga0.8As/In0.15Ga0.85As enhancement-mode pseudomorphic HEMTs (E-PHEMTs) using a newly developed citric buffer etchant are reported for the first time. The innovated etchant near room temperature (23 °C) possesses a hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::824d1d1fd9c83b7a10d9dd265736d479
https://doi.org/10.1016/j.mssp.2005.02.001
https://doi.org/10.1016/j.mssp.2005.02.001