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Autor:
Marjorie A. Olmstead, Fumio S. Ohuchi, Patrick J. Shamberger, Kenneth M. Beck, Alan G. Joly, Chill-Yuan Lu, Esmeralda N. Yitamben
Publikováno v:
Applied Physics A. 93:93-98
Phase transformation of thin film (∼30 nm)In2Se3/Si(111) (amorphous→crystalline) was performed by resistive annealing and the reverse transformation (crystalline→amorphous) was performed by nanosecond laser annealing. As an intrinsic-vacancy, b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ca1f44fb8962648908e965ca82fc53e
https://doi.org/10.1007/s00339-008-4776-8
https://doi.org/10.1007/s00339-008-4776-8
