Zobrazeno 1 - 10
of 101
pro vyhledávání: '"Chilhee Chung"'
Publikováno v:
IEEE Transactions on Electron Devices. 60:2031-2037
Endurance degradation model applicable to the broad node range of floating-gate NAND flash memory is proposed for the first time. The model is based on generation of the trapped charge, which follows nonuniform spatial distribution of the erase tunne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1e00564a63968ae07e9813aadbde203
https://doi.org/10.1109/ted.2013.2256789
https://doi.org/10.1109/ted.2013.2256789
Publikováno v:
Microelectronic Engineering. 104:33-36
An attenuated phase shift mask (PSM) (half-tone PSM) is an effective and common technique for resolution enhancement and for forming specific patterns. When an ArF-attenuated PSM with hole- or space-type patterns is used under a KrF light source scan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18e703a30402a7fcb8b5368f88124e60
https://doi.org/10.1016/j.mee.2012.11.003
https://doi.org/10.1016/j.mee.2012.11.003
Autor:
Lilong Shi, Ilia Ovsiannikov, Dong-Ki Min, Wonjoo Kim, Yibing Michelle Wang, Grzegorz Waligorski, Hongyu Wang, Yoondong Park, Chilhee Chung
Publikováno v:
Color and Imaging Conference. 21:108-113
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::478b0d656f8b7a7bc113644adca99a2b
https://doi.org/10.2352/cic.2013.21.1.art00019
https://doi.org/10.2352/cic.2013.21.1.art00019
Autor:
Gi-young Yang, Keun-Ho Lee, Jongwook Jeon, Chilhee Chung, Kihwan Choi, Wook-Ghee Hahn, Young-Kwan Park, Sunghee Yun, Il Han Park, Myounggon Kang
Publikováno v:
IEEE Transactions on Electron Devices. 59:3503-3509
In this paper, we have developed a new floating-gate-type Flash cell compact model based on the channel potential by using PSP metal-oxide-semiconductor description. Cell-to-cell coupling, Fowler-Nordheim tunneling, and new leakage current formulas h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3b9a66dff47b4b0a2cc95e658e5c13b
https://doi.org/10.1109/ted.2012.2219863
https://doi.org/10.1109/ted.2012.2219863
Debris flows caused by heavy rainfall in mountain areas near expressways lead to severe social and economic loss and sometimes even result in casualties. However, in Korea, the design of road structures that resist these debris flow incidents are gen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::15dbae669b5db14ced34be82bf4f9c1b
https://doi.org/10.5194/nhess-2016-2
https://doi.org/10.5194/nhess-2016-2
Autor:
Seong-Hoon Jeong, Byoungdeog Choi, Bong-Hyun Kim, Jae-jong Han, Ho-kyun An, Kong-Soo Lee, Yoongoo Kang, Hyunho Park, Ho-Kyu Kang, Hongsik Jeong, Seok-Woo Nam, Chilhee Chung
Publikováno v:
ECS Transactions. 45:49-54
In this study, the enhancement of the silicon etch rate with the heavy doping of phosphorus and arsenic was studied during cyclic selective epitaxial growth process using batch-type equipment. The reaction between molecular chlorine and heavily doped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::583291520cecf2a2438abdb7c56ce3f9
https://doi.org/10.1149/1.3700938
https://doi.org/10.1149/1.3700938
Autor:
Myounggon Kang, Young-Ho Lim, Youngsun Song, Chilhee Chung, Kitae Park, Sung-Soo Lee, Kang-Deog Suh
Publikováno v:
IEEE Journal of Solid-State Circuits. 45:2165-2172
In this paper, dynamic Vpass ISPP schemes and optimizing Vth of erase memory cells are presented for achieving high program inhibition with lower program disturbance in sub-40 nm MLC NAND flash and beyond. Simple two-step dynamic Vpass control techni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b92018fb0868128ee4fa6d891c863f31
https://doi.org/10.1109/jssc.2010.2062311
https://doi.org/10.1109/jssc.2010.2062311
Publikováno v:
IEEE Electron Device Letters. 34:411-413
We investigated the intrinsic variation of retention in phase-change memory using a phase-field method that is capable of depicting stochastic nucleation followed by the growth of the nucleated crystallites. We found that the median of the retention
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::182ae2307ac2e71edbf73694718cd3d1
https://doi.org/10.1109/led.2013.2242038
https://doi.org/10.1109/led.2013.2242038
Autor:
Chilhee Chung, Jong Duk Lee, Byung-Gook Park, Donggun Park, Sung Taeg Kang, Jae Sung Sim, Yong Kyu Lee, Suk Kang Sung, Ki Whan Song, Kinam Kim
Publikováno v:
Solid-State Electronics. 48:1771-1775
A physically separated 2-bit SONOS memory with a single gate is fabricated for the first time. By forming physically separated 30-nm twin ONOs with an inverted sidewall spacer patterning method and damascene process under a merged-triple gate, the de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e14cd72fb787a390e437a0b7f6a431f
https://doi.org/10.1016/j.sse.2004.05.048
https://doi.org/10.1016/j.sse.2004.05.048
Autor:
Hanwook Jeong, Jae-jong Han, Byoungdeog Choi, Han-jin Lim, Hyunho Park, Hongsik Jeong, Kong-Soo Lee, Seok-Woo Nam, Chilhee Chung
Publikováno v:
IEEE Electron Device Letters. 33:242-244
In this letter, a cost-effective vertical diode scheme for next-generation memory devices, including phase-change memories (PCMs), is realized. After the contact formation for diodes with only one mask layer, an amorphous silicon (a-Si) film was depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c95c0a75476438cf935f58796f5407d
https://doi.org/10.1109/led.2011.2175358
https://doi.org/10.1109/led.2011.2175358