Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Chikayoshi Morishima"'
A Continuous-Adaptive DDRx Interface with Flexible Round-Trip-Time and Full Self Loop-Backed AC Test
Autor:
Akira Yamazaki, Kazutami Arimoto, Masaru Haraguchi, Y. Okuno, Toshinori Morihara, Yoshikazu Morooka, Tokuya Osawa, Chikayoshi Morishima
Publikováno v:
IEICE Transactions on Electronics. :453-459
This paper describes new DDRx SDRAM interface architecture suitable for system-on-chip (SOC) implementation. Our test chip fabricated in a 90-nm CMOS process adopts three key schemes and achieves 960 Mb/s/pin operations with 32 bits width. One of new
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e29cca66e28fab5bc27c9b6449185e0e
https://doi.org/10.1587/transele.e92.c.453
https://doi.org/10.1587/transele.e92.c.453
Publikováno v:
Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals. 267:417-422
Novel optical and electroluminescent characteristics of organic multiple-quantum-well (MQW) structure have been discussed comparing with MQW structure which consists of cyclopentadiene derivatives (PPCP) and aromatic diamine (TPD) and that of aluminu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc6ead781b2e699b874ca6c70ab17f8b
https://doi.org/10.1080/10587259508034025
https://doi.org/10.1080/10587259508034025
Publikováno v:
Journal of Physics: Condensed Matter. 5:7979-7986
A thin film multi-layer structure consisting of alternating layers of organic 8-hydroxyquinoline aluminium (Alq3) and aromatic diamine (TPO) has been grown by organic molecular beam deposition. The structure of the multi-layer has been confirmed by X
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4988a035aace27eaccb8eb3fb103cb43
https://doi.org/10.1088/0953-8984/5/43/012
https://doi.org/10.1088/0953-8984/5/43/012
Publikováno v:
Synthetic Metals. 57:4168-4173
Visible red-orange poly(3-alkylthiophene) and blue poly(alkylfluorene) electroluminescent diodes have been successfully fabricated and the emission characteristics of the diode have been discussed. The electroluminescent diodes consist of thin polyme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c5ba96394bad996ef4b811f7a51ca29
https://doi.org/10.1016/0379-6779(93)90576-i
https://doi.org/10.1016/0379-6779(93)90576-i
Publikováno v:
Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals. 227:285-294
Fabrication and characteristics of Schottky gated field effect transistors (FETs) and visible electroluminescent (EL) diodes utilizing poly(3-alkylthiophene)s have been presented. The FETs show typical enhancement type metal-semiconductor FET charact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9564c7fc7b4ee7c6f50b516590d5a47
https://doi.org/10.1080/10587259308030982
https://doi.org/10.1080/10587259308030982
Publikováno v:
Synthetic Metals. 57:4180-4185
Pulse response of electroluminescent diodes utilizing conducting polymers has been investigated. The electroluminescent diode consists of a thin polymer film (about 100 nm thickness) sandwiched by ITO and Mg electrodes. The response of emission from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5f3c6d9b5e9bd5a1537f34ab408b0af
https://doi.org/10.1016/0379-6779(93)90578-k
https://doi.org/10.1016/0379-6779(93)90578-k
A Continuous-Adaptive DDR2 Interface with Flexible Round-Trip-Time and Full Self Loop-Backed AC Test
Autor:
Masaru Haraguchi, Akira Yamazaki, Tokuya Osawa, Toshinori Morihara, Y. Morooka, Kazutami Arimoto, Y. Okuno, Chikayoshi Morishima
Publikováno v:
ISSCC
An experimental chip for a 32b wide DDR2 SDRAM interface for SoC is fabricated in a 90nm CMOS process and achieves 960Mb/s/pin operation. Impedance-calibration circuits and flexible round-trip circuits in a continuous-adaptive DDR2 interface are used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3cf727021b9f3235bc69f1cb49370fd
https://doi.org/10.1109/isscc.2007.373508
https://doi.org/10.1109/isscc.2007.373508
Publikováno v:
Applied Physics Letters. 63(14):1871-1873
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Yutaka Ohmori, Akihiko Fujii, Masao Uchida, Chikayoshi Morishima, and Katsumi Yoshino, Appl. Phys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2292c136953535c9f3fe90df0734b1bb
https://hdl.handle.net/11094/75649
https://hdl.handle.net/11094/75649
Publikováno v:
Applied Physics Letters. 62(25):3250-3252
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Yutaka Ohmori, Akihiko Fujii, Masao Uchida, Chikayoshi Morishima, and Katsumi Yoshino, Appl. Phys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbfeb532565456b3a307e9c9b47620c3
https://hdl.handle.net/11094/75648
https://hdl.handle.net/11094/75648
Autor:
Yoshiki Tujihashi, Yasushi Hayakawa, K. Nii, Hiroyuki Nunogami, Chikayoshi Morishima, Takahiko Arakawa, Hiroshi Makino, H. Hamano
Publikováno v:
ISLPED
We have been proposed a low power SRAM using an effective method called “ABC-MT-CMOS” [1]. It controls the backgates to reduce the leakage current when the SRAM is not activated (sleep mode) while retaining the data stored in the memory cells. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b485bf888fd6f111fc2a9ee2b1d8e427
https://doi.org/10.1145/280756.280939
https://doi.org/10.1145/280756.280939