Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Chii-Ming Wu"'
Autor:
Mei-Lien Hsu, Chung-Chuan Chang, Yun-Nan Lin, Chii-Ming Wu, Hong-Lin Jong, Li-Chuan Yang, Chien-Tien Hsu
Publikováno v:
Asia-Oceania Journal of Obstetrics and Gynaecology. 11:203-207
A case of endometrial stromal sarcoma associated with the use of an IUCD is to be added to our previous report which included 4 cases of uterine malignancies developing after long-term use of IUCD. In the present case, the IUCD (Lippes loop and nylon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b3930ba0684350048c981c15a164218a
https://doi.org/10.1111/j.1447-0756.1985.tb00734.x
https://doi.org/10.1111/j.1447-0756.1985.tb00734.x
Publikováno v:
Thin Solid Films. :487-490
In this paper, a universal model to predict the amount of allowable metal thinning for the control of copper chemical–mechanical polishing (CMP) is presented. In the model, all the non-planarity, like dishing and erosion, resulted from the copper C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84b24597b2741027e4800c2cc5a0c6da
https://doi.org/10.1016/j.tsf.2004.06.169
https://doi.org/10.1016/j.tsf.2004.06.169
Autor:
Chun-Wen Nieh, Kuan-Lun Cheng, Ming-Ta Lei, Chung-Cheng Wu, Da-Wen Lin, R. Lin, B. Tarng, Carlos H. Diaz, Chii-Ming Wu, Che-Min Chu, Shyh-Wei Wang, M.Y. Wang, Ming-Lung Cheng, Chia-Ping Lo, Wen-Chi Tsai, Ming-Jer Chen, Yi-Ming Sheu
Publikováno v:
IEEE Electron Device Letters. 29:998-1000
We demonstrate, for the first time, an integration-friendly selective PMOSFET fully silicided (FUSI) gate process. In this process, a millisecond-anneal (MSA) technique is utilized for the nickel silicide phase transformation. A highly tensile FUSI g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::767c1221c476eca283134690aef914a5
https://doi.org/10.1109/led.2008.2001850
https://doi.org/10.1109/led.2008.2001850
Publikováno v:
Thin Solid Films. 334:77-81
Cubic perovskite Ba(Ti 1-x Zr x )O 3 (BTZ) thin films of x =0.12 and 150–180 nm thick were prepared on Pt/Ti/SiO 2 /Si substrate by rf magnetron sputtering deposition at high temperatures. A satisfactory dielectric constant of 250–305 was obtaine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbf1700ebf6c80af179efb26e479d3ea
https://doi.org/10.1016/s0040-6090(98)01120-1
https://doi.org/10.1016/s0040-6090(98)01120-1
Autor:
Chii-Ming Wu, Tai-Bor Wu
Publikováno v:
Materials Letters. 33:97-100
Sputter-deposited LaNiO 3 (LNO) was used as a conductive buffer layer for the deposition of 80 nm thick (Ba 0.4 Sr 0.6 )TiO 3 (BST) thin films on Pt/Ti/SiO 2 /Si substrates by rf magnetron sputtering. Smooth and highly (100)-oriented perovskite films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::814e781912db8a4ac0b54f9d3a7f9d92
https://doi.org/10.1016/s0167-577x(97)00083-9
https://doi.org/10.1016/s0167-577x(97)00083-9
Publikováno v:
Journal of Materials Research. 12:2158-2164
Highly (100)-oriented thin films of PbTiO3 were prepared on (100)-textured LNO/Pt/Ti/SiO2/Si substrates by rf magnetron sputtering at temperatures ≥480 °C, while randomly oriented PbTiO3 films were obtained on Pt/Ti/SiO2/Si substrates. The texture
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2baf81579b641ef2e4a4b42c631f6340
https://doi.org/10.1557/jmr.1997.0289
https://doi.org/10.1557/jmr.1997.0289
Autor:
W. Chang, P.W. Wang, Ming-Ta Lei, K. Goto, H.C. Hsieh, C.H. Diaz, W.Y. Lien, S.C. Wang, H.Y. Huang, Hun-Jan Tao, Y.H. Chang, C.H. Yeh, L.T. Lin, D.Y. Lee, C.C. Wu, S.P. Fu, Y.H. Chiu, J.H. Chen, M.H. Hsieh, Y.P. Wang, C.T. Lin, Che-Min Chu, H.H. Lin, S.Y. Lu, Y.J. Mii, S.J. Yang, Chun-Kuang Chen, C.F. Nieh, Y.Y. Tarng, Kuan-Lun Cheng, M. Cao, Chii-Ming Wu, H.C. Tuan, D.W. Lin, M.J. Huang, F.C. Chen, C.M. Liu, M.Y. Wang
Publikováno v:
2007 IEEE International Electron Devices Meeting.
A highly scaled, high performance 45 nm CMOS technology utilizing extensive immersion lithography to achieve the industry's highest scaling factor with ELK (k=2.55) BEOL is presented. A record gate density 2.4X higher than that of 65 nm is achieved.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::166dfe572d93dc05f186c9f2320a2e52
https://doi.org/10.1109/iedm.2007.4418913
https://doi.org/10.1109/iedm.2007.4418913
Autor:
Fu-Jye Liang, Kuang-Hsin Chen, Carlos H. Diaz, Chun-Kuang Chen, Jaw-Jung Shin, Chii-Ming Wu, Lin-Hung Shiu, Chenming Hu, Li-Wei Kung, Ping-Wei Wang, Chang-Yun Chang, Cheng-Chuan Huang, Chiu-Lien Lee, Bor-Wen Chan, King-Chang Shu, Tsai-Sheng Gau, Samuel Fung, Chang-Ta Yang, J.Y.-C. Sun, Cheng-Kuo Wen, Hou-Yu Chen, Peng-Fu Hsu, M.S. Liang, Burn-Jeng Lin, Jyu-Honig Shieh, Yee-Chaung See, Jan-Wen You, Fu-Liang Yang, Chien-Chao Huang, Hung-Wei Chen, Di-Hong Lee, Tang-Xuan Chung, Shui-Ming Cheng, Sheng-Da Liu, Bin-Chang Chang, Yu-Jun Chou
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
The first 45nm node planar-SOI technology has been developed with 6T-SRAM cell of 0.296 /spl mu/m/sup 2/. An adequate static noise margin of 120mV is obtained even at 0.6V operation. Fine patterning with line pitch of 130nm and contact pitch of 140nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c63f77d8d1817a120f09384733d85752
https://doi.org/10.1109/vlsit.2004.1345362
https://doi.org/10.1109/vlsit.2004.1345362
Publikováno v:
Applied Physics Letters. 66:2643-2645
Highly (100)‐oriented LaNiO3(LNO) thin films were grown on Si, SiO2/Si, Pt/SiSiO2/Si, as well as glass substrates by rf magnetron sputtering deposition at substrate temperatures ranging from 150 to 500 °C. As‐deposited LNO films are metallic; th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6c55d4c8492b2689b41b6e0275d4c9f
https://doi.org/10.1063/1.113111
https://doi.org/10.1063/1.113111
Autor:
Wen-Chi Tsai, S. S. Huang, Sheng Wei Lee, Chii-Ming Wu, C. P. Lo, M. Y. Wang, P. Y. Tsai, C. H. Lai, Chun-Wen Nieh, Ming-Ta Lei, H. C. Hsu
Publikováno v:
Journal of The Electrochemical Society. 157:H297
This study investigates the formation of Ni silicides on Si 1-y C y (0 ≤ y ≤ 0.02) epilayers grown on Si(001). The presence of C atoms retards the growth kinetics of NiSi and significantly enhances the thermal stability of NiSi thin films. In par
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea01feb89e1c4103035b1b26e859f8f0
https://doi.org/10.1149/1.3276060
https://doi.org/10.1149/1.3276060