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Autor:
Kazunari Hatade, K. Takano, Tadaharu Minato, Chihiro Tadokoro, Mitsuru Kaneda, J. Yahiro, Shigeru Kusunoki
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
For IGBTs, there are strong requirements for high current density usage from the cost reduction point of view and high speed operation from the system efficiency point of view. Strong carrier lifetime control is needed to reduce a turn-off loss (Eoff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a865fccead6f730465c7f2d8dc164dd9
https://doi.org/10.1109/ispsd.2011.5890809
https://doi.org/10.1109/ispsd.2011.5890809
