Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Chihiro Funaoka"'
Autor:
M. C. Schmidt, James S. Speck, Thomas M. Katona, Craig Moe, Hitoshi Tamura, Chihiro Funaoka, Steven P. DenBaars, Robert D. Underwood, Tal Margalith, Shuji Nakamura, H. Sato
Publikováno v:
physica status solidi (c). :2206-2209
UV LEDs with a peak emission wavelength of 336 nm were grown on a gallium nitride/sapphire substrate by inserting an AlN interlayer to prevent cracking. A maximum output power of 44 μW was achieved at 100 mA DC for 200 × 200 μm die wirebonded to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::969eff2fcb349171076e4340edd3819f
https://doi.org/10.1002/pssc.200303397
https://doi.org/10.1002/pssc.200303397
Autor:
Christiane Poblenz, James S. Speck, D. S. Green, Chihiro Funaoka, Steven P. DenBaars, Hitoshi Sato, Thomas M. Katona, Hitoshi Tamura, P. Waltereit
Publikováno v:
physica status solidi (c). :2193-2197
Blue light emitting diodes (LEDs) were grown by rf-plasma assisted molecular beam epitaxy on GaN templates having threading dislocation densities of ∼8 × 107 and ∼1 × 109 cm−2. The dependence of light-current curves on device size indicated t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74a2a9e1e78043d438c72ebf72d62631
https://doi.org/10.1002/pssc.200303299
https://doi.org/10.1002/pssc.200303299
Autor:
Hitoshi Sato, Naochika Horio, Takako Chinone, Hitoshi Tamura, Kazuyoshi Taniguchi, Youji Yamashita, Shinya Omori, Chihiro Funaoka
Publikováno v:
Japanese Journal of Applied Physics. 42:4197-4202
We investigated the dependence of the electroluminescence (EL) characteristics on the layer thickness and the solid-phase composition of AlGaN clad layers in GaInN single-quantum-well light-emitting diodes (LEDs), and how to control the emission wave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::640c764e6027921a0a4f0ee7ce2c568b
https://doi.org/10.1143/jjap.42.4197
https://doi.org/10.1143/jjap.42.4197
Autor:
Christiane Poblenz, J.-H. Liang, H. Sato, D. S. Green, Steven P. DenBaars, Thomas M. Katona, Melvin McLaurin, S. Omori, Jay S. Brown, M. Kato, Hitoshi Tamura, Chihiro Funaoka, James S. Speck, P. Waltereit
Publikováno v:
Applied Physics Letters. 84:2748-2750
We have grown blue (480 nm) nitride semiconductor light emitting diodes (LEDs) by plasma-assisted molecular beam epitaxy (MBE) on GaN templates. Packaged devices exhibited output powers up to 0.87 mW at 20 mA forward current. The corresponding extern
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::190782eca33ed6c881e4cf98694e3aad
https://doi.org/10.1063/1.1705721
https://doi.org/10.1063/1.1705721