Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Chih-yuan Hou"'
Autor:
Chih-Yuan Hou, 侯智元
94
In this thesis, Ni-metal induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been studied. The influence of tensile stress on the growth mechanism of NILC is investigated. Furthermore, we fabricate the LTPS TFTs by Ni-meta
In this thesis, Ni-metal induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been studied. The influence of tensile stress on the growth mechanism of NILC is investigated. Furthermore, we fabricate the LTPS TFTs by Ni-meta
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/20854110303949352237
Autor:
Chih-Yuan Hou, 侯智元
90
Wafer Bonding Process for High Brightness LEDs Student: Chih-Yuan Hou Advisor: Yewchung Sermon Wu Department of Material Science and Engineering National Chiao Tung University Abstract The (AlxGa1-x)0.5In0.5P /GaP transparent substrate (TS) l
Wafer Bonding Process for High Brightness LEDs Student: Chih-Yuan Hou Advisor: Yewchung Sermon Wu Department of Material Science and Engineering National Chiao Tung University Abstract The (AlxGa1-x)0.5In0.5P /GaP transparent substrate (TS) l
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/29953218214780488042
Autor:
Chaoqun Yang, Chang-Chih Huang, Guanghui Liu, Jianfeng Yuan, Juihui Zhu, Zhifu Li, Chih-yuan Hou, Guopeng Li
Publikováno v:
SID Symposium Digest of Technical Papers. 51:1695-1698
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::824700b533db74161d15ac088b64031f
https://doi.org/10.1002/sdtp.14224
https://doi.org/10.1002/sdtp.14224
Publikováno v:
Proceedings of the International Display Workshops. :294
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::168c68c489ef7392dedbade78f18cf7d
https://doi.org/10.36463/idw.2019.0294
https://doi.org/10.36463/idw.2019.0294
Publikováno v:
ECS Transactions. 3:203-206
Ni-metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technolo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26ca641bfe4c87a2548997232ff3f884
https://doi.org/10.1149/1.2356355
https://doi.org/10.1149/1.2356355
Publikováno v:
Materials Science and Engineering: A. 278:54-60
Titanium is an anti-spheroidizing element and also carbide former in ductile iron. On the other hand, increasing the casting size essentially lowers the cooling rate that opposes the chilling tendency of titanium. This research was to study the combi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::892df9b757c75f49de9235a3ab1ae048
https://doi.org/10.1016/s0921-5093(99)00599-7
https://doi.org/10.1016/s0921-5093(99)00599-7
Publikováno v:
Japanese Journal of Applied Physics. 45:6803-6805
Ni–metal-induced lateral crystallization (NILC) of amorphous silicon (α-Si) has been employed to fabricate high-performance low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization techno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c3902d1ff786d9dc611f1de0721e4f1
https://doi.org/10.1143/jjap.45.6803
https://doi.org/10.1143/jjap.45.6803
Autor:
Yi-Ya Tseng, Chan-Ching Chang, Kun-Fu Huang, Chih-Yuan Hou, Ya-Hui Peng, Chih Hsien Chen, Yeong-Shyang Lee, Tzung-Shi Huang
Publikováno v:
SID Symposium Digest of Technical Papers. 39:333
A 32-inch microcrystalline silicon thin film transistor liquid crystal display was manufactured on 1500×1850 mm2 (G6) glass substrate. We have successfully deposited non-porous and highly crystalline microcrystalline silicon film with interfacial tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfe3c4d05a55a2906088b6cca152f9b1
https://doi.org/10.1889/1.3069662
https://doi.org/10.1889/1.3069662
Autor:
Chih Yuan Hou, YewChung Sermon Wu
Publikováno v:
Japanese Journal of Applied Physics. 45:5667
Thin-film transistors (TFTs) fabricated using and needle grains have been investigated. They were fabricated by Ni–metal-induced lateral crystallization and Ni–metal imprint-induced crystallization method. It is found that the performance of 112-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ffbeb6754c7302ff4f6df917f23fb6f
https://doi.org/10.1143/jjap.45.5667
https://doi.org/10.1143/jjap.45.5667
Publikováno v:
ECS Meeting Abstracts. :1574-1574
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bb0904541abd1691dfed1ff2e44dfb8
https://doi.org/10.1149/ma2006-02/33/1574
https://doi.org/10.1149/ma2006-02/33/1574