Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Chih-Yen Shen"'
Publikováno v:
IEEE Transactions on Electron Devices. 55:1027-1034
In this paper, we describe a systematic study of the electrical properties of low-temperature-compatible p-channel polycrystalline-silicon thin-film transistors (poly-Si TFTs) using HfO2 and HfSiOx, high-k gate dielectrics. Because of their larger ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::415b0f651a801a3908f99c31e33fd03c
https://doi.org/10.1109/ted.2008.916759
https://doi.org/10.1109/ted.2008.916759
Autor:
Dawei Heh, Kuang-Yeu Hsieh, Jeng-Hwa Liao, Yung-Tai Hung, Chih-Yuan Lu, Jung-Yu Hsieh, Hang-Ting Lue, Chih-Yen Shen, Fang-Hao Hsu, H.Y. Wu, Fu-Kuo Hsueh, Min-Ta Wu, Pei-Ying Du, Chiao-Wen Yeh, Shih-Ping Hong, Chih-Ping Chen, Sheng-Chih Lai
Publikováno v:
2010 IEEE International Memory Workshop.
The behavior of barrier engineered charge trapping devices incorporating Al 2 O 3 and HfO 2 high-K layers has been critically examined. We propose to use a thicker buffer oxide (≫ 6 nm) and thin (≪5nm) high-K top capping layer for BE-MAONOS and B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4932e707627fa17d161bb4d76f544415
https://doi.org/10.1109/imw.2010.5488382
https://doi.org/10.1109/imw.2010.5488382
Autor:
Hou-Yu Chen, Chenming Hu, Chih-Yen Shen, Hsi-Ta Chuang, Fu-Liang Yang, Chiung-Chih Hsu, Shyi-Long Shy, Chun-Chi Chen, Bih-Tiao Lin, Chien-Chao Huang, Fu-Kuo Hsueh, Jan-Tsai Liu, Cheng-San Wu
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
Record area size of 0.039µm2 for a functional 6T-SRAM cell has been successfully achieved with a novel Nano Injection Lithography (NIL) technique and dynamic Vdd regulator (DVR). The NIL technique is not only maskless for minimizing entry cost but a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfb9cd0d766befacb979586f37cbcbee
https://doi.org/10.1109/iedm.2009.5424252
https://doi.org/10.1109/iedm.2009.5424252
Publikováno v:
Journal of The Electrochemical Society. 155:H363
In this study, we investigated the physical and electrical characteristics of Ge polycrystalline films deposited directly onto SiO2-covered substrates using inductively coupled plasma chemical vapor deposition ICP-CVD. The pure Ge films that we depos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9326028f13d6b85babc2d237c5a48f6b
https://doi.org/10.1149/1.2901885
https://doi.org/10.1149/1.2901885
Autor:
Yuan-Yao Li, H. Lin, Chin-Pao Huang, S. Ismat Shah, Chih-Yen Shen, Chia-Hung Huang, Chien-Sheng Kuo, Yao-Hsuan Tseng
Publikováno v:
Nanotechnology. 18:465607
Carbon nanotube (CNT)-grafted TiO(2) (CNT/TiO(2)) was synthesized as an electrically conductive catalyst that exhibits redox ability under electrical excitation besides ultraviolet (UV) irradiation. The CNT/TiO(2) material was synthesized by a two-st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1284a6ab844b50bed1c4970c37fd56bd
https://doi.org/10.1088/0957-4484/18/46/465607
https://doi.org/10.1088/0957-4484/18/46/465607
Autor:
Sheng-Chih Lai, Chih-Ping Chen, Pei-Ying Du, Hang-Ting Lue, Dawei Heh, Chih-Yen Shen, Hsueh, F.K., Wu, H.Y., Jeng-Hwa Liao, Jung-Yu Hsieh, Wu, M.T., Hsu, F.H., Hong, S.P., Yeh, C.T., Yung-Tai Hung, Kuang-Yeu Hsieh, Chih-Yuan Lu
Publikováno v:
2010 IEEE International Memory Workshop (IMW); 2010, p1-4, 4p
Publikováno v:
Journal of The Electrochemical Society; 2008, Vol. 155 Issue 6, pH363-H368, 6p, 4 Black and White Photographs, 1 Chart, 12 Graphs
Publikováno v:
IEEE Transactions on Electron Devices; Apr2008, Vol. 55 Issue 4, p1027-1034, 8p, 1 Diagram, 2 Charts, 8 Graphs