Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Chih-Ning Wu"'
Publikováno v:
Solid State Phenomena. :357-360
The borderless (BDL) vias landing on the metal lines were demanded in high-density flash memory devices due to the reduced die size, compared with non-borderless (NBDL) vias. IMD material recess in un-landed via dry etching and the Al-Cu metal line u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::086fa7caca2d5156f3e1a3ee87135ba3
https://doi.org/10.4028/www.scientific.net/ssp.145-146.357
https://doi.org/10.4028/www.scientific.net/ssp.145-146.357
Publikováno v:
Solid State Phenomena. :35-38
In the conventional wet cleaning process of contact holes landing on the Si substrate and WSi metal gate, the ILD BPTEOS bowing and CD enlargement were often found by using dilute HF solution. With the device design rule decreasing, the CD size contr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::352d2d4a6844a6d7882483eea7a263a5
https://doi.org/10.4028/www.scientific.net/ssp.145-146.35
https://doi.org/10.4028/www.scientific.net/ssp.145-146.35
Autor:
Shing-Li Sung, Kuei-Jung Chao, Yuh-Lin Wang, Tzeng-Guang Tsai, Xing-Jian Guo, Han-Chang Shih, Chih-Ning Wu
Publikováno v:
Advanced Materials. 9:1154-1157
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d52e3989c83e552a4f976bcd8277aaff
https://doi.org/10.1002/adma.19970091505
https://doi.org/10.1002/adma.19970091505
Publikováno v:
Advanced Materials. 8:1008-1012
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73f9c627a93ee479fcdadc87b94327d3
https://doi.org/10.1002/adma.19960081215
https://doi.org/10.1002/adma.19960081215
Publikováno v:
Microporous Materials. 7:173-185
A series of silicate, aluminosilicate, titanosilicate and vanadosilicate MCM-41 zeolites consisting of bimodal pore systems of mesopore/macropore and mesopore only were synthesized under various conditions. The N2 adsorption-desorption isotherm and e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::346e05bd52a54e52d8274aad64a63a4d
https://doi.org/10.1016/0927-6513(96)00049-1
https://doi.org/10.1016/0927-6513(96)00049-1
Publikováno v:
ChemInform. 28
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a786a887bf2eb8c7a57737b014de768d
https://doi.org/10.1002/chin.199711266
https://doi.org/10.1002/chin.199711266
Publikováno v:
IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)..
High aspect ratio 35nm FinFET devices with nitrided oxide gate dielectrics have been successfully integrated with a fully silicidated (FUSI) CoSi/sub 2/ gate electrode. To prevent the possible CoSi/sub 2/-FUSl gate line discontinuity below 65nm gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b194f740f94e3f5aed38091b40acd0a8
https://doi.org/10.1109/vtsa.2005.1497102
https://doi.org/10.1109/vtsa.2005.1497102
Publikováno v:
IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech); 2005, p114-115, 2p