Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Chih-Ming Tai"'
Autor:
Chih-Ming Tai, 戴志銘
96
In order to reduce the size of high-frequency communication devices, the general technology trend is to integrate both the active and passive components in the same substrate. The active components are generally fabricated on low resistivity
In order to reduce the size of high-frequency communication devices, the general technology trend is to integrate both the active and passive components in the same substrate. The active components are generally fabricated on low resistivity
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/61116982338575185025
Autor:
Chih-Ming Tai, 戴志明
91
The increasing number of respiratory related diseases has been a by-product of modernization and industrialization. A portable spirometric system, which aims for home care and possible screening test in hospital is the answer to this need. In
The increasing number of respiratory related diseases has been a by-product of modernization and industrialization. A portable spirometric system, which aims for home care and possible screening test in hospital is the answer to this need. In
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/90965862526023716779
Autor:
Chih-Ming Tai, 戴志銘
90
A highly efficient electromagnetic microactuator that is capable of achieving large out-of-plane displacement and large force via passing through a small current density was designed and fabricated in this work. The actuator is assembled by o
A highly efficient electromagnetic microactuator that is capable of achieving large out-of-plane displacement and large force via passing through a small current density was designed and fabricated in this work. The actuator is assembled by o
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/39113949764285342849
Publikováno v:
Vacuum. 140:161-164
Anomalous enhancement of phosphorus diffusion in pre-amorphized ultrashallow junctions was observed when the dose for carbon co-implantation was increased to 5 × 10 15 cm −2 at 5 keV. Simulation was performed to verify the diffusion mechanism and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a5f01be3d6b3be143641e8153673707
https://doi.org/10.1016/j.vacuum.2016.10.003
https://doi.org/10.1016/j.vacuum.2016.10.003
Autor:
Chien-Neng Liao, Chih-Ming Tai
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 55:2579-2585
In this paper, a physical model is presented to predict the frequency-dependent characteristics of solenoid-type inductors on standard silicon substrates. The model considers the skin-depth effect in the conductor, interwinding capacitance, parasitic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bcff1070902a464435acd062a3a970c
https://doi.org/10.1109/tmtt.2007.910069
https://doi.org/10.1109/tmtt.2007.910069
Autor:
Chih-Ming Tai, Chien-Neng Liao
Publikováno v:
IEEE Transactions on Electron Devices. 54:1510-1514
Single-level and double-level (DL) suspended inductors on low-resistivity silicon wafers were successfully fabricated and characterized in the multigigahertz frequency range. Three-dimensional suspended inductor structures were realized by a sacrific
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c352541801a29264aa6cbf3b6cea31ba
https://doi.org/10.1109/ted.2007.896347
https://doi.org/10.1109/ted.2007.896347
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
Multiple-gate FETs such as FinFETs would be adopted at the 22nm technology generation and beyond, owing to the better control of short-channel effects (SCEs) in high-volume manufacturing. In this paper, we present a novel implantation mode called “
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c42d3ef78f7fc4c56607d9d4403e3a2a
https://doi.org/10.1109/iit.2014.6939991
https://doi.org/10.1109/iit.2014.6939991
Autor:
Rekha Padmanabhan, Gary N. Cai, Wilhelm P. Platow, Ching-I Li, Chih-Ming Tai, Kourosh Saadatmand, Zhimin Wan, Ger-Pin Lin, Po-Heng Lin, Ruey-Dar Chang
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
In order to achieve high performance finFET devices, it is important to achieve a high concentration and conformal doping within the Fin. In this paper, a solution for conformal finFET doping method is demonstrated. We present a novel implantation co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2900185df08d9620141beb3cc1634e51
https://doi.org/10.1109/iit.2014.6939992
https://doi.org/10.1109/iit.2014.6939992
Autor:
Chien-neng Liao, Chih-ming Tai
Publikováno v:
2006 International Conference on Communications, Circuits and Systems.
A solenoid inductor with a peak quality factor (Qmax) of 33.4 at 4.6 GHz has been realized on standard silicon wafers with a low-k dielectric layer using surface micromachining techniques. Experimental results show that the 6-turn inductor with an as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::047a35c41d089874366df226c91228fa
https://doi.org/10.1109/icccas.2006.284789
https://doi.org/10.1109/icccas.2006.284789
Autor:
Chih-Ming Tai, Chien-Neng Liao
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eca0345509f72349086b5b3a6970ca1e
https://doi.org/10.7567/ssdm.2006.a-3-2
https://doi.org/10.7567/ssdm.2006.a-3-2