Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Chih-Ming Sun"'
Publikováno v:
2017 IEEE 30th International Conference on Micro Electro Mechanical Systems (MEMS).
This study designs and implements a thermoelectric IR sensor using TSMC 0.35μm 2P4M standard CMOS process. The novel design has three major concerns: heat conduction of the absorber membrane, distribution of the thermocouple, and etching release hol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5747991d29bfe04ccea97ff5dd7310c4
https://doi.org/10.1109/memsys.2017.7863638
https://doi.org/10.1109/memsys.2017.7863638
Publikováno v:
Journal of Micromechanics and Microengineering. 29:025007
This study presents the micro thermoelectric infrared (IR) sensor consisting of the heat transduction absorber and the serpentine structure with embedded thermocouple using the TSMC 0.18 µm 1P6M standard CMOS process and the in-house post-CMOS MEMS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be89f32f29adf39ba3d58cd1af060a07
https://doi.org/10.1088/1361-6439/aaf7dd
https://doi.org/10.1088/1361-6439/aaf7dd
Autor:
Michael Goss, Hiroaki Takikawa, Min-Joon Park, Chih-Ming Sun, Jun Belen, Mark Kelling, Lin Pinyen, James Paris, Lucy Chen, George Stojakovic, Troy S. Detrick, Yii-Cheng Lin, Shannon Dunn, Wenli Collison, Norman Fish
Publikováno v:
SPIE Proceedings.
In the Global 450mm Equipment Development Consortium (G450C), a 193i guided directed self-assembly (DSA) pattern has been used to create structures at the 14nm node and below. The first guided DSA patterned wafer was ready for etch process developmen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0d8e98e060f2cfd4a3053891458b1c3
https://doi.org/10.1117/12.2218537
https://doi.org/10.1117/12.2218537
Publikováno v:
2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS).
This study presents the world first post-CMOS 3-axis accelerometer to meet the commercial specifications using the 0.18μm standard CMOS process and one-step vapor HF post CMOS process. The novel pure-metal hollow springs and high stiffness proof-mas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b267a414a8373b3a8d72112001d88d0f
https://doi.org/10.1109/memsys.2016.7421802
https://doi.org/10.1109/memsys.2016.7421802
Publikováno v:
Journal of Microelectromechanical Systems. 20:119-127
This paper reports a capacitive-type CMOSmicroelectromechanical system tactile sensor containing a capacitance-sensing gap filled with polymer. Thus, the equivalent stiffness of the tactile sensor can be modulated by the polymer fill-in, so as to fur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b30c1f17a943806031fe01d126d927d
https://doi.org/10.1109/jmems.2010.2090494
https://doi.org/10.1109/jmems.2010.2090494
Publikováno v:
IEEE Transactions on Electron Devices. 57:1670-1679
This paper presents a novel single proof-mass tri-axis capacitive type complementary metal oxide semiconductor-microelectromechanical system accelerometer to reduce the footprint of the chip. A serpentine out-of-plane (Z-axis) spring is designed to r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::871f217d1b8dbf24c873ce0294c0f674
https://doi.org/10.1109/ted.2010.2048791
https://doi.org/10.1109/ted.2010.2048791
Publikováno v:
Sensors and Actuators A: Physical. 141:347-352
This study presents an improved CMOS capacitive accelerometer design. In this design, the sensitivity has been increased by adding the number of sensing finger arrays. Moreover, the present accelerometer successfully employs the additional springs an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::548204057dae0da5ec58f52f8bb904fb
https://doi.org/10.1016/j.sna.2007.10.026
https://doi.org/10.1016/j.sna.2007.10.026
Publikováno v:
Journal of Micromechanics and Microengineering. 17:1275-1280
This study presents a novel CMOS-MEMS out-of-plane linear accelerometer. This capacitance-type accelerometer contains specially designed gap-closing sensing electrode arrays with on-chip fully differential sensing circuits. Moreover, the comb-finger
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9a471e851b51f83f2336a39a441a397
https://doi.org/10.1088/0960-1317/17/7/009
https://doi.org/10.1088/0960-1317/17/7/009
Autor:
Yu-Chia Liu, Weileun Fang, P.-H Lo, Chitsung Hong, Ming-Han Tsai, Chih-Ming Sun, C.-I Chang, J.-H Yeh
Publikováno v:
2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII).
Performance enhancement of CMOS-MEMS accelerometer by growing nanoporous anodic aluminum oxide (np-AAO) thin layer on sensing electrodes has been developed and demonstrated for the first time. Such device has the following advantages: (1) initial cap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83aefcdc7ed4bd67bc7c4177cef7eb52
https://doi.org/10.1109/transducers.2013.6626841
https://doi.org/10.1109/transducers.2013.6626841