Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Chih-Ming Ke"'
Autor:
Chih-Ming Ke, 柯志明
98
The deviation problem of conveyor in a continuous production process of colorful steel coil is inevitable; moreover the wave edges of raw steel coil, the poor shape and the uneven thickness of aluminum zinc coating, cause the protrusion and d
The deviation problem of conveyor in a continuous production process of colorful steel coil is inevitable; moreover the wave edges of raw steel coil, the poor shape and the uneven thickness of aluminum zinc coating, cause the protrusion and d
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/55853107493520806041
Autor:
Chih-Ming Ke, 柯志銘
96
The twenty-first century is the globalized competition age. In accommodation to rapid change of the competitive industrial environment, the application of information technology becomes the major factor for enterprise to survive. The crucial
The twenty-first century is the globalized competition age. In accommodation to rapid change of the competitive industrial environment, the application of information technology becomes the major factor for enterprise to survive. The crucial
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/yhn8zn
Autor:
Martin Jacobus Johan Jak, Andreas Fuchs, Kevin Cheng, Grzegorz Grzela, L. G. Terng, Wilson Tzeng, Christophe Fouquet, Marc Noot, Guo-Tsai Huang, Ken Chang, Y. C. Wang, Eason Su, Omer Adam, Arie Jeffrey Den Boef, Chih-Ming Ke, Kai-Hsiung Chen, Cathy Wang, Sax Liao, Vincent Couraudon, Kaustuve Bhattacharyya
Publikováno v:
SPIE Proceedings.
The optical coupling between gratings in diffraction-based overlay triggers a swing-curve1,6 like response of the target’s signal contrast and overlay sensitivity through measurement wavelengths and polarizations. This means there are distinct meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a3ddbb2f8940f861ad1198f216fa88b
https://doi.org/10.1117/12.2257662
https://doi.org/10.1117/12.2257662
Autor:
Jon Wu, Hsieh Hung-Chih, Martin Ebert, Kai-Hsiung Chen, Aileen Soco, Pavel Izikson, Yong Ho Kim, Maxime d'Alfonso, Guo-Tsai Huang, Wei-Feng Ni, Aysegul Cumurcu Gysen, Shiuan-An Rao, Jeroen Ottens, Jacky Huang, Chih-Ming Ke, T. K. Chuang, Jenny Yueh, Tjitte Nooitgedagt, Shu-Chuan Chuang
Publikováno v:
SPIE Proceedings.
On-product overlay requirements are becoming more challenging with every next technology node due to the continued decrease of the device dimensions and process tolerances. Therefore, current and future technology nodes require demanding metrology ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e14053673cde7610f6c7ce93b3266442
https://doi.org/10.1117/12.2257894
https://doi.org/10.1117/12.2257894
Autor:
Hsiang-Lin Chen, Che-Yuan Sun, Chih-Ming Ke, Jia-Rui Hu, Shu-Chuan Chuang, Yu-Lung Tung, Woei-Bin Luo, Tsai-Sheng Gau, Hua-Tai Lin
Publikováno v:
SPIE Proceedings.
Immersion technology has successfully extends the application of ArF lithography in the semiconductor. However, as we further push the k 1 factor below 0.3, the patterning fidelities degrade significantly. In this paper, a novel method to quantify th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12d27fbd765514adbb2369cbd2b711ae
https://doi.org/10.1117/12.2218346
https://doi.org/10.1117/12.2218346
Autor:
Frank Staals, Benny Gosali, Francois Furthner, Chih-Ming Ke, Desmond Ngo, Jia-Rui Hu, Maryana Escalante Marun, Ward Tu, Robin Tijssen, Christian Marinus Leewis, Martijn van Veen, Ying-Yu Chen, Stuart Young, Vincent Huang, K. H. Chen, Frankie Tsai, Kaustuve Bhattacharyya, Brian Lee, C. H. Liao, Carlo Cornelis Maria Luijten, Marc Noot
Publikováno v:
SPIE Proceedings.
In advanced optical lithography the requirements of focus control continues to tighten. Usable depth of focus (DoF) is already quite low due to typical sources of focus errors, such as topography, wafer warpage and the thickness of photoresist. And n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a7ba0c5fc3124d3fa3b7e4e4df6204a
https://doi.org/10.1117/12.2220373
https://doi.org/10.1117/12.2220373
Autor:
Y. C. Ku, Takuya Mori, Chris de Ruiter, Greet Storms, Guo-Tsai Huang, Jon Wu, Christophe Fouquet, Kelvin Pao, Charlie Chen, Tatung Chow, C. W. Hsieh, Jacky Huang, KS Chen, T. S. Gau, Martijn van Veen, Martijn Maassen, Reinder Teun Plug, Pu Li, Chih-Ming Ke, Arie Jeffrey Den Boef, Paul Christiaan Hinnen, Hua Xu, Maurits van de Schaar, Kai-Hsiung Chen, Youping Zhang, Kaustuve Bhattacharyya, Yi-Yin Chen, Gary Zhang, Eric Verhoeven, Steffen Meyer
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
In order to meet current and future node overlay, CD and focus requirements, metrology and process control performance need to be continuously improved. In addition, more complex lithography techniques, such as double patterning, advanced device desi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4c3afa285f770dc50332f9f9e6e84b3
https://doi.org/10.1117/12.2047098
https://doi.org/10.1117/12.2047098
Autor:
Kai-Hsiung Chen, Kaustuve Bhattacharyya, Arie Jeffrey Den Boef, Maurits van der Schaar, Henk-Jan H. Smilde, Stephen P. Morgan, Andreas Fuchs, Martin Jacobus Johan Jak, Murat Bozkurt, Mark van Schijndel, Steffen Meyer, Chih-Ming Ke, Guo-Tsai Huang
Publikováno v:
SPIE Proceedings.
The target size reduction for overlay metrology is driven by the optimization of the device area. Furthermore, for the future semiconductor nodes accurate metrology on the order of 0.2 nm is necessary locally in the device area, requiring small in-di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41f73e7fbbda5ecbd0b50d8a555bbeae
https://doi.org/10.1117/12.2020930
https://doi.org/10.1117/12.2020930
Autor:
Kai-Hsiung Chen, Kaustuve Bhattacharyya, Henk-Jan H. Smilde, Chih-Ming Ke, Andreas Fuchs, Arie Jeffrey Den Boef, Guo-Tsai Huang, Steffen Meyer
Publikováno v:
ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference.
The high-end semiconductor lithography requirements for overlay and focus control in near-future ITRS nodes are at subnanometer level. This development is extremely challenging for the metrology precision and accuracy, as scaling down to the sub-angs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c96694d70f41f23faf79014d802f508f
https://doi.org/10.1109/asmc.2013.6552760
https://doi.org/10.1109/asmc.2013.6552760
Publikováno v:
SPIE Proceedings.
In image-based overlay (IBO) measurement, the measurement quality of various measurement spectra can be judged by quality indicators and also the ADI-to-AEI similarity to determine the optimum light spectrum. However we found some IBO measured result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10aec434445492e15fd237729c542b2e
https://doi.org/10.1117/12.2010570
https://doi.org/10.1117/12.2010570