Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Chih-Hsiung Liao"'
Autor:
Chih-Hsiung Liao, 廖志雄
106
In this study, a portable electrochemical potentiostat and disposable gold electrodes were used to develop a real time heavy metal analyzer. The heavy metal analyzer is able to determine trace level of zinc in water. Square wave anodic strip
In this study, a portable electrochemical potentiostat and disposable gold electrodes were used to develop a real time heavy metal analyzer. The heavy metal analyzer is able to determine trace level of zinc in water. Square wave anodic strip
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/bxka2p
Autor:
Chih-Hsiung Liao, 廖志雄
96
Taiwan is an essential worldwide base for IT products research, development and manufacture. Furthermore, IT industry plays a decisive role in Taiwan market, and it will be definitely potential commerce in the future because of the highly dev
Taiwan is an essential worldwide base for IT products research, development and manufacture. Furthermore, IT industry plays a decisive role in Taiwan market, and it will be definitely potential commerce in the future because of the highly dev
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/46280277664885532021
Autor:
Li-Wei Tu, Yu-Hsuan Yu, Chun-Fu Chang, Chi-Chung Kei, Tsan-Chuen Leung, Chien-Wei Chen, Yu-yuan Zheng, Hye-Won Seo, Sung-Wei Yeh, Bor Yann Liaw, Kuan-Tsae Huang, Wanchen Hsieh, P.V. Wadekar, Quark Y. Chen, Kung-Shiuh Huang, Chun-Jung Su, Che-Min Lin, Wei-Kan Chu, Di Chen, Ching-Wen Chang, Yu-Chiao Lin, Chih-Hsiung Liao
Publikováno v:
Vacuum. 192:110386
Novel physical properties not seen in their individual layers are obtained from stacked layers of materials. In this report, using the first-principles calculations, we study the electronic band structures of heterostructures composed of graphitic (g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d2af118d5c26fc0d40e446a80d58662
https://doi.org/10.1016/j.vacuum.2021.110386
https://doi.org/10.1016/j.vacuum.2021.110386
Publikováno v:
Science and Technology of Advanced Materials, Vol 9, Iss 4, p 045001 (2008)
We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO2 films implanted by different doses of Si+ ions. Room-temperature PL from 400-nm-thick SiO2 films implanted to a dose of 3
Externí odkaz:
https://doaj.org/article/21951be7423041e7aad9e712905b8824
Autor:
P.V. Wadekar, Ching-Wen Chang, Hua-Hsien Liao, Chun-Fu Chang, Hui-Chun Huang, Jun-Hau Wang, Jyun-Jie Lin, Hye-Won Seo, New-Jin Ho, Chih-Hsiung Liao, Li-Wei Tu, Wanchen Hsieh, Wei-Kan Chu, Yu-Sheng Wang, Wen-Yen Lin, Quark Y. Chen
Publikováno v:
AIP Advances. 6:075018
Low-leakage pin diodes based on ZnO-i-Si are realized by redox reaction of aluminum with the native oxide SiOx into AlOx and by proper selection of annealing conditions. The main sources of electric leakage was found to arise from charge carrier tunn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7d7c677ca437961137c8abba3bb806e
https://doi.org/10.1063/1.4960012
https://doi.org/10.1063/1.4960012
Autor:
Li-Wei Tu, Jun-Hau Wang, Hua Hsien Liao, Dharshana Wijesundera, Guo-Sin Huang, Quark Y. Chen, Chun-Fu Chang, New-Jin Ho, Chih-Hsiung Liao, Hui-Chun Huang, Jin-Jie Lin, Wei-Kan Chu, P.V. Wadekar
Publikováno v:
2012 38th IEEE Photovoltaic Specialists Conference.
RF magnetron sputtering has been employed to deposit n-type epitaxial zinc oxide thin films on p-type silicon substrates to form p-n diode structures. Native SiOx layers, Commonly found on silicon, typically of a few nanometer thick, would hinder the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50c520ba3a3eec14d0d0e0115e350023
https://doi.org/10.1109/pvsc.2012.6317813
https://doi.org/10.1109/pvsc.2012.6317813
We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO2 films implanted by different doses of Si+ ions. Room-temperature PL from 400-nm-thick SiO2 films implanted to a dose of 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5799dcc4eafd11adf1768b6f479e96d0
https://europepmc.org/articles/PMC5099643/
https://europepmc.org/articles/PMC5099643/
Autor:
Chun-Fu Chang, Wadekar, Paritosh V., Wan-Chen Hsieh, Wen-Yen Lin, Yu-Sheng Wang, Jun-Hau Wang, Jyun-Jie Lin, Hui-Chun Huang, Ching-Wen Chang, Li-Wei Tu, Chih-Hsiung Liao, Hua-Hsien Liao, New-Jin Ho, Hye-Won Seo, Chen, Quark Y., Wei-Kan Chu
Publikováno v:
AIP Advances; 2016, Vol. 6 Issue 7, p075018-1-075018-8, 8p
Autor:
Chih-Hsiung Liao, Jiann-Shing Shyu
Publikováno v:
Japanese Journal of Applied Physics. 40:4109
In this paper, we have derived approximate formulas from the Fresnel formulas and pole expansion for the reflectivity and resonant frequency in an arbitrary multilayer system. In accordance with the results of simulation, we conclude that the resonan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::304135c2732908f1cd8f41370028e60c
https://doi.org/10.1143/jjap.40.4109
https://doi.org/10.1143/jjap.40.4109