Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Chih-Hsiun Chu"'
Publikováno v:
Japanese Journal of Applied Physics. 42:1928-1932
With an increase of power dissipation and integrated-circuit (IC) density in system-on-a-Chip (SoC), it is not sufficient to determine complementary metal-oxide-semiconductor (CMOS) device lifetime by merely monitoring stress-bias conditions, such as
Autor:
Lizzy Huang, Chi-Wei Hung, Terry Chen, Evans Ching-Song Yang, Bennett Hsu, Charles Ching-Hsiang Hsu, Vincent Huang, Ya-Ching King, Chih-Hsiun Chu, Da Sung, Sean Chang, Jiang-Chi Duh
Publikováno v:
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).
Buried bit-line NAND (BiNAND) Flash is newly proposed to achieve low voltage programming/erase and facilitate multi-level storage. Due to the buried bit-line, the required high program/erase voltage for FN tunneling can be divided between word-line a
Autor:
Sean Chang, Evans Yang, Terry Chen, Lizzy Huang, Bennett Hsu, Da Sung, Jiang-Chi Duh, Chi-Wei Hung, Vincent Huang, Ya-Ching King, Chih-Hsiun Chu, Charles Ching-Hsiang Hsu
Publikováno v:
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407); 2003, p95-96, 2p