Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Chih-Hsiao Chen"'
Autor:
Chih-Hsiao Chen, Hadi Hadi
Publikováno v:
Health physics. 121(1)
There is no article discussing how to apply the International Electrotechnical Commission (EIC) 60825-1 standard to evaluate laser safety for irregular non-pulsed signal. Yet, as more and more laser applications are introduced, it is very possible th
Publikováno v:
Materials Chemistry and Physics. 90:361-366
Colloids of triangular silver platelets and the platelets coated with a layer of gold have been prepared and analyzed by dynamic light scattering (DLS), transmission electron microscopy (TEM), high-resolution electron microscopy (HRTEM), ultraviolet-
Autor:
Chih-Hsiao Chen, G. Griffel
Publikováno v:
IEEE Journal of Quantum Electronics. 34:1533-1544
A novel frequency-domain transmission line model for multisection distributed feedback (DFB) lasers is developed. The characteristic impedances of active periodic structures are derived. A multisection DFB laser is described as a transmission line ne
Autor:
Uziel Koren, Barry Miller, S.C. Shunk, Chih-Hsiao Chen, K.F. Dreyer, M. Chien, R.G. Ahrens, H.M. Presby
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 3:1421-1428
We present a novel coupling scheme consisting of an integrated beam expander, a specifically tailored TiO/sub 2/ antireflection coating, optical index matching gel, and uncoated flat-end single-mode fiber (SMF). This scheme was used to package four-c
Autor:
Chih-Hsiao Chen, G. Griffel
Publikováno v:
IEEE Journal of Quantum Electronics. 32:61-68
Analysis of a novel semiconductor laser structure designed for obtaining wide tuning range along with high speed modulation response is presented. The laser consists of a composite cavity structure with two active (gain) sections. One of the sections
Autor:
Chih-Hsiao Chen, G. Griffel
Publikováno v:
Proceedings of LEOS'94.
Multi-section semiconductor lasers have emerged as prime candidates for fast, tunable transmitters in optical communication systems. It was realized that, due to the shorter carrier lifetime under stimulated emission, an active (gain) tuning section
Publikováno v:
Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243).
We have carried out gain saturation experiments using pulsed pump and probe beams derived from gain switched DFB semiconductor optical amplifier lasers. The widths of both pump and probe pulses were 35 ps. The gain saturation of the probe takes place
Autor:
Chih-Hsiao Chen, Giora Griffel
Publikováno v:
LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference Proceedings.
In this paper, we present a novel transmission-line approach to the static and dynamic analysis of multisection semiconductor lasers. The technique is generic and can be applied to any structure that includes several segments within the laser cavity.
Publikováno v:
Physics and Simulation of Optoelectronic Devices VII.
We have performed cross gain modulation measurements on a 2-section semiconductor optical amplifier (SOA) using pulsed pump and probe beams. The probe amplitude and pulse width under this condition has been measured and analyzed. The results of the a