Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Chih-Ciao Yang"'
Autor:
Ming-Lung Lee, Jinn-Kong Sheu, Chih-Ciao Yang, H.-W Huang, F.-M. Kuo, Jin-Wei Shi, Wei-Chih Lai
Publikováno v:
IEEE Electron Device Letters. 32:656-658
In this letter, the mechanism for improvement of the dynamic performance of GaN-based light-emitting diodes with an InGaN insertion layer is investigated using the very fast electrical-optical pump-probe technique. Our measurements indicate that, whe
Autor:
Shang-Ju Tu, Li-Chi Peng, Wei-Chih Lai, Ming-Lun Lee, Jinn-Kong Sheu, Kuo-Hua Chang, Chih-Ciao Yang
Publikováno v:
IEEE Electron Device Letters. 30:225-227
In this letter, we display InGaN/GaN-based photovoltaic (PV) devices with active layers in absorbing the solar spectrum around blue regions. The GaN/In0.25Ga0.75 N superlattice layers grown by metalorganic vapor-phase epitaxy are designed as the abso
Autor:
J.Y. Cheng, Shyh-Fann Ting, Wen-Han Wang, Y.K. Fang, S.-C. Chen, Chung-Hui Chen, Mong-Song Liang, L.G. Yao, Chih-Ciao Yang, C.H. Yu, Ming-Fang Wang, C.L. Chen, S.F. Chen, T.L. Lee
Publikováno v:
IEEE Electron Device Letters. 24:43-45
In this work, the thermal annealing at 720/spl deg/C for 2 hr (called boron uphill treatment) with an SiO/sub 2/-capped layer was applied after source/drain extensions (SDE) implantation to improve the short channel characteristics of a 0.1-/spl mu/m
Autor:
Jinn-Kong Sheu, Shang Ju Tu, Kuo Hua Chang, Chih Ciao Yang, Ming-Lun Lee, Min Shun Huang, W.C. Lai, Feng Wen Huang
Publikováno v:
SPIE Proceedings.
In this study, hetero-structure p-i-n type epitaxy wafers were deposited on the GaN/sapphire templates with different buffer layers by the MOVPE system. The absorption layers sandwiched in top p-GaN and bottom n + -GaN layers were designed into diffe
Autor:
Shyh-Fann Ting, Ming-Fang Wang, Yong-Shiuan Tsair, Chen-Hua Yu, Mong-Song Liang, Chih-Ciao Yang, Chung-Hui Chen, Tuo-Hung Hou, Mo-Chiun Yu, Yean-Kuen Fang, Steven Chen
Publikováno v:
IEEE Electron Device Letters. 22:378-380
Ultrathin thermally enhanced remote plasma nitrided oxides (TE-RPNO) with equivalent oxide thickness down to 1.65 nm are fabricated to investigate their leakage current reduction and boron diffusion barrier performances. A PMOSFET with TE-RPNO, compa
Autor:
R. Shih, Jyh-Jier Ho, Mong-Song Liang, C.H. Yu, Wen-Tse Hsieh, Shyh-Fann Ting, Chih-Ciao Yang, Mo-Chiun Yu, S.-C. Chen, Chung-Hui Chen, Syun-Ming Jang, Y.K. Fang
Publikováno v:
IEEE Electron Device Letters. 22:327-329
The authors report the effect of the remote plasma nitridation (RPN) process on characteristics of ultrathin gate dielectric CMOSFETs with the thickness in the range of 18 /spl Aring//spl sim/22 /spl Aring/. In addition, the effect of RPN temperature
Autor:
Shyh-Fann Ting, Yong-Shiuan Tsair, Chih-Ciao Yang, Lin You-Ru, Shih-Chang Chen, Mo-Chiun Yu, Chen-Hua Yu, Ming-Fang Wang, Chung-Hui Chen, Mong-Song Liang, Y.K. Fang
Publikováno v:
IEEE Electron Device Letters. 22:260-262
Ultrathin nitride/oxide (N/O) gate dielectric stacks with equivalent oxide thickness of 1.6 nm have been fabricated by combining remote plasma nitridation (RPN) and low pressure chemical vapor deposition (LPCVD) technologies. NMOSFETs with these gate
Autor:
Jinn-Kong, Sheu, Kuo-Hua, Chang, Shang-Ju, Tu, Ming-Lun, Lee, Chih-Ciao, Yang, Che-Kang, Hsu, Wei-Chih, Lai
Publikováno v:
Optics express. 18
In this study, GaN-based light-emitting diodes (LEDs) with naturally formed oblique sidewall facets (OSFs) were fabricated through a selective regrowth process. The SiO₂ mask layer was patterned on a heavily doped n-GaN template layer rather than o
Autor:
Wei-Chih Lai, Kuo-Hua Chang, Yu Hsiang Yeh, Jinn-Kong Sheu, F. W. Huang, Shang-Ju Tu, Chih-Ciao Yang, Ming-Lun Lee
Publikováno v:
Optics Express. 19:12719
In this article, the characteristics of GaN-based LEDs grown on Ar-implanted GaN templates to form inverted Al0.27Ga0.83N pyramidal shells beneath an active layer were investigated. GaN-based epitaxial layers grown on the selective Ar-implanted regio
Autor:
Wei-Chih Lai, Jinn-Kong Sheu, Shang-Ju Tu, F. W. Huang, Yu Hsiang Yeh, Chih-Ciao Yang, Ming-Lun Lee, Chung-Hsun Jang
Publikováno v:
Optics Express. 19:A695
InGaN/sapphire-based photovoltaic (PV) cells with blue-band GaN/InGaN multiple-quantum-well absorption layers grown on patterned sapphire substrates were characterized under high concentrations up to 150-sun AM1.5G testing conditions. When the concen