Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Chih-Chun Hu"'
Autor:
Chih-Chun Hu, 胡智鈞
臺大-復旦EMBA境外專班
107
Semiconductor distributors play an intermediary role in the electronic component manufacturing industry. From the supply chain to the demand chain, providing electronic manufacturing customer warehouse mana
107
Semiconductor distributors play an intermediary role in the electronic component manufacturing industry. From the supply chain to the demand chain, providing electronic manufacturing customer warehouse mana
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/87maek
Autor:
Chih-Chun Hu, 胡智鈞
104
With the coming of innovative economy era, while many old cities are facing the issues of old streets, industrial declining and stagnation of development, some cities preserve the styles and features of old architectures completely for the u
With the coming of innovative economy era, while many old cities are facing the issues of old streets, industrial declining and stagnation of development, some cities preserve the styles and features of old architectures completely for the u
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/01294919525674251681
Publikováno v:
Langmuir : the ACS journal of surfaces and colloids. 38(2)
In this study, we employed a dual strategy for parathion organophosphate pesticide (parathion) detection; first, we used a localized surface plasmon resonance (LSPR)-based colorimetric sensor featuring thiol-capped Au NPs, namely cysteine (Cys)@Au NP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dfdbba8c4fe291c53f0430b424839880
https://pubmed.ncbi.nlm.nih.gov/34989582
https://pubmed.ncbi.nlm.nih.gov/34989582
Autor:
Chien Hua Yu, Chu An Chiu, Chang Luen Wu, Tsu Yi Wu, Yeong-Her Wang, Jian Xuan Xu, Po Wen Sze, Chih Chun Hu
Publikováno v:
Vacuum. 118:142-146
AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with a liquid phase deposited (LPD) ZrO2 thin film as gate insulator was fabricated. Compared with the conventional HEMT, the maximum drain current increases from 492 to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82a82f4a28f603e0956254fe828c8058
https://doi.org/10.1016/j.vacuum.2015.01.012
https://doi.org/10.1016/j.vacuum.2015.01.012
Publikováno v:
Brain and Behavior, Vol 14, Iss 1, Pp n/a-n/a (2024)
Abstract Background The research landscape examining social cognition (SC) impairment in patients with major depressive disorders (MDD) and bipolar disorders (BD) is notably scarce. Presently, assessments predominantly rely on static stimuli and self
Externí odkaz:
https://doaj.org/article/89f2eafced3541898ec9a7413fd7caf9
Publikováno v:
Materials Science in Semiconductor Processing. 29:272-276
Enhancement-mode In0.53Ga0.47As n-type metal-oxide-semiconductor field-effect transistors (MOSFETs), with barium zirconate titanate (BZT) and titanium dioxide (TiO2) high-κ materials prepared via the solution–gelation process as gate dielectrics,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44bf5ec177930b0df22727772500a0ed
https://doi.org/10.1016/j.mssp.2014.04.020
https://doi.org/10.1016/j.mssp.2014.04.020
Publikováno v:
Thin Solid Films. 563:40-43
Liquid phase deposition (LPD) was performed to fabricate titanium dioxide (TiO 2 ) on AlGaAs by using ammonium sulfide pretreatment. In addition, the study investigated how postoxidation rapid thermal annealing (RTA) affected the LPD-TiO 2 on (NH 4 )
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d415583536863a7a24791109e62a001
https://doi.org/10.1016/j.tsf.2014.04.010
https://doi.org/10.1016/j.tsf.2014.04.010
Autor:
Po Wen Sze, Yeong-Her Wang, Chang Luen Wu, Tsu Yi Wu, Feri Adriyanto, Tong Jyun Huang, Chih Chun Hu
Publikováno v:
Solid-State Electronics. 82:1-5
SrTiO 3 thin films were deposited on AlGaN/GaN wafer by a simple, low-temperature liquid-phase deposition (LPD) method, and applied as the gate dielectric in metal oxide semiconductor high electron mobility transistor (MOSHEMT). X-ray diffraction and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d52ff9d0b4829f02cabe806cf7310cb0
https://doi.org/10.1016/j.sse.2013.01.020
https://doi.org/10.1016/j.sse.2013.01.020
Autor:
Chih-Chun Hu, Mon-Sen Lin, Yeong-Her Wang, Po-Wen Sze, Chang-Luen Wu, Feri Adriyanto, Tsu-Yi Wu
Publikováno v:
IEEE Transactions on Electron Devices. 59:121-127
Barium-doped TiO2 films deposited on GaN layers at low temperature through a simple liquid phase deposition method is investigated. The use as a gate dielectric in AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25d1437bb630d7177fe75897ff586b8b
https://doi.org/10.1109/ted.2011.2171690
https://doi.org/10.1109/ted.2011.2171690
Autor:
Chih Chun Hu, Tong Jyun Huang, Feri Adriyanto, Tsu Yi Wu, Po Wen Sze, Yeong-Her Wang, Chang Luen Wu
Publikováno v:
ECS Transactions. 41:423-428
Through a simple, low-temperature liquid-phase deposition (LPD) method, SrTiO3 thin films were deposited on GaN as the gate dielectric for metal oxide semiconductor high electron mobility transistor application. X-ray photoelectron spectroscopy was e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0a961f6a1a6535fdb59847797711483
https://doi.org/10.1149/1.3633057
https://doi.org/10.1149/1.3633057