Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Chih-Chong Wang"'
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The feature of this BCD180 process is flexible to plug-in varied high voltage devices based on fundamental 1.8V/5V BCD process, and we present the plug-in LDMOS reach to 150V operation voltage in this paper.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4bbc489f2f69f108e3b68560e255b81
https://doi.org/10.1109/ispsd.2018.8393670
https://doi.org/10.1109/ispsd.2018.8393670
Autor:
Chiu-Te Lee, Ke-Feng Lin, Hsin-Liang Liu, Chih-Chong Wang, Ze-Wei Jhou, Shu-Wen Lin, Shih-teng Huang
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
This paper demonstrated a novel LDMOS with gate-connected shielding-contact structure, no extra mask or process is needed. TCAD simulation reveals lower electrical potential and impact ionization with the proposed structure. Ron-sp/BVD ratio reductio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d0466c385aed8922d9d4e47157de896
https://doi.org/10.23919/ispsd.2017.7988966
https://doi.org/10.23919/ispsd.2017.7988966
Autor:
Ming-Shiann Feng, H.C. Cheng, Iing-Jar Hsieh, Chih-Chong Wang, M.S. Chen, Tzu-Kun Ku, W.F. Lee, C.M. Huang
Publikováno v:
International Electron Devices and Materials Symposium.
Field emitter arrays of very sharp silicon tips have been fabricated using wet chemical etching technique. High depth to-width ratio silicon tips have been also fabricated using the semi-anisotropic dry etching technique. After the oxidation sharpeni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7f15724b220d457594f21c950b8d3b1
https://doi.org/10.1109/edms.1994.863880
https://doi.org/10.1109/edms.1994.863880
Autor:
S.H. Chen, Tzu–Kun Ku, Chao-Kan Yang, Iing Jar Hsieh, N.J. She, Huang-Chung Cheng, Chih–Chong Wang, Chia-Fu Chen
Publikováno v:
IEEE Electron Device Letters. 17:208-210
Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccf067ca7881e61b2c2cb935d24a0c6c
https://doi.org/10.1109/55.491831
https://doi.org/10.1109/55.491831
Publikováno v:
SPIE Proceedings.
The structure of Pd-silicided field emitters based on the silicon micromachining technology has been demonstrated. The uniform and extremely sharp silicided emitters are formed using wet chemical etching, low-temperature oxidation sharpening, coating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b925fcf52e182d90e15c8ae5e7307835
https://doi.org/10.1117/12.220936
https://doi.org/10.1117/12.220936
Publikováno v:
Japanese Journal of Applied Physics. 35:3681
The structure of Pd-silicided field emitters based on the silicon micromachining technology has been demonstrated. The uniform and extremely sharp silicided emitters are formed using wet chemical etching, low-temperature oxidation sharpening (LTOS),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cffa299af801fe4d5a88b13e66dab5e
https://doi.org/10.1143/jjap.35.3681
https://doi.org/10.1143/jjap.35.3681
Publikováno v:
Japanese Journal of Applied Physics. 35:308
A novel fabrication technology has been successfully developed for chimney-shaped metal field emitters in order to improve the electrical characteristics of field-emission devices. This technology is based on anisotropic dry etching and sputtering de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db2656e1e4cce916f60d81724153c800
https://doi.org/10.1143/jjap.35.308
https://doi.org/10.1143/jjap.35.308
Autor:
Tzu-Kun Ku, Chih-Chong Wang, Ming-Shang Chen, Iing-Jar Hsieh, Ming-Shiann Feng, Jammy C. M. Huang, Huang-Chung Cheng
Publikováno v:
Japanese Journal of Applied Physics. 34:5789
A new two-dimensional numerical simulation which can accurately reproduce the empirical electrical characteristics of vertical field-emission triodes (FET's) with various gate geometries has been developed. The electrical characteristics of volcano-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2291f0c69aa65feb3c18ca5beb451e04
https://doi.org/10.1143/jjap.34.5789
https://doi.org/10.1143/jjap.34.5789
Autor:
Ming-Shang Chen, Chih-Chong Wang, Tze-Kun Ku, Ming-Shiann Feng, Huang-Chung Cheng, Iing-Jar Hsieh, Wen-Fang Lee
Publikováno v:
Japanese Journal of Applied Physics. 34:L85
A new fabrication technology has been used for field-emission triodes with the emitter-gate separation as small as 0.18 µ m to reduce the turn-on and anode voltages. The technology is based on the thermal oxidation of silicon and low-pressure chemic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ec70f237e08ac062920bf9b6c99d78a
https://doi.org/10.7567/jjap.34.l85
https://doi.org/10.7567/jjap.34.l85
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