Zobrazeno 1 - 10
of 138
pro vyhledávání: '"Chih-Chin Yang"'
Autor:
Chih Chin Yang, Cong Min Hu
Publikováno v:
Materials Science in Semiconductor Processing. 164:107567
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee69e9bbf36f44ce04b59217aff17af9
https://doi.org/10.1016/j.mssp.2023.107567
https://doi.org/10.1016/j.mssp.2023.107567
Publikováno v:
2022 IEEE 4th Eurasia Conference on Biomedical Engineering, Healthcare and Sustainability (ECBIOS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72ee08a82714435552989dd53c9e17ef
https://doi.org/10.1109/ecbios54627.2022.9945001
https://doi.org/10.1109/ecbios54627.2022.9945001
Publikováno v:
2021 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b5dca30ac46f0a30f2f59a92a11d293
https://doi.org/10.1109/ispacs51563.2021.9650928
https://doi.org/10.1109/ispacs51563.2021.9650928
Autor:
Yi-Chin Fang, Jenny Chih-Yu Lee, Chih-Kai Cheng, Yu-Mei Liu, Cheng-Fu Yang, Chih-Chin Yang, Hsiao-Yi Lee, Shun-Hsyung Chang
Publikováno v:
Modern Physics Letters B. 35
Hydrophones with three different resonant cavities (microscope slide, cavity with 9.8 mm diameter and 5.7 mm[Formula: see text] curve surface, and cavity with 14 mm diameter and 6.5 mm[Formula: see text] curve surface) and with two different electrod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94822b7fe83e8587a1a5024e3e8a02f7
https://doi.org/10.1142/s0217984921410128
https://doi.org/10.1142/s0217984921410128
Autor:
Chih Chin Yang, Chih Cheng Wu, Yu Liang Hsiao, Zong Hsien Wu, Shun Hsyung Chang, Hung Yu Wang, Chih Lung Shen
Publikováno v:
IEEE Transactions on Dielectrics and Electrical Insulation. :1-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d6149020b952bbd50bf024abaf22ca9
https://doi.org/10.1109/tdei.2022.3163798
https://doi.org/10.1109/tdei.2022.3163798
Publikováno v:
International Journal of Modern Physics B. 34:2040155
Behavior models are proposed for HSPICE simulation of first-, second- and third-generation current conveyors. They can be used to speed up the exploration and verification of current conveyor-based circuit designs. To demonstrate the feasibility and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72c6451cb3bef171daf63c13629e87e5
https://doi.org/10.1142/s0217979220401554
https://doi.org/10.1142/s0217979220401554
Autor:
Chih Chin Yang
Publikováno v:
Electronics, Vol 8, Iss 6, p 673 (2019)
Electronics
Volume 8
Issue 6
Electronics
Volume 8
Issue 6
A resonant tunneling electronic circuit (RTEC) with high and multiple peak-to-valley current density ratios (PVCDRs) exhibited in the negative differential resistance (NDR) curve has been proposed in this research. The PVCDR values in simulating rese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8364b5afa00c4b1774a58b81c07a3f1d
https://doi.org/10.1109/is3c.2018.00030
https://doi.org/10.1109/is3c.2018.00030
The characteristics of the gallium-doped zinc oxide films using radio frequency magnetron sputtering
Publikováno v:
2018 7th International Symposium on Next Generation Electronics (ISNE).
Transparent conductive gallium-doped zinc oxide (GZO) thin films with different deposition power (from 75 to 150 W) were prepared on the Coring glass substrate by using R.F. magnetron sputtering method. The resulting GZO thin films were crystalline,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af01c2f30a47d884fff3faf6aa0f0a08
https://doi.org/10.1109/isne.2018.8394654
https://doi.org/10.1109/isne.2018.8394654
Publikováno v:
Microelectronics Journal. 46:1392-1397
InAs-based p-n interband tunneling bi-barrier resonant microwave (ITE BBRM) devices were successfully fabricated by using the molecular beam epitaxial (MBE) method in this research. The influence of a central barrier thickness from 10A to 40A on elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12003e00c49808a50ff720bcef6a5de0
https://doi.org/10.1016/j.mejo.2015.08.017
https://doi.org/10.1016/j.mejo.2015.08.017
Autor:
Jing Yi Wang, Chih Chin Yang
Publikováno v:
IEEE Sensors Journal. 15:5938-5945
As the growth temperature, annealing temperature, and annealing time of InN sensing film of InN/InNO/In2O3/In/SiO2/Si humidity sensor were, respectively, adjusted at 400 °C, 400 °C, and 15 min, the sensing surface possesses obvious particles of nan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f774c47e16b100f13bb03835a3c75c86
https://doi.org/10.1109/jsen.2015.2449873
https://doi.org/10.1109/jsen.2015.2449873