Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Chih-Chia Lin"'
Autor:
Wei-Hsin Chen, Yaun-Sheng Wang, Min-Hsing Chang, Liwen Jin, Lip Huat Saw, Chih-Chia Lin, Ching-Ying Huang
Publikováno v:
Energies, Vol 16, Iss 15, p 5642 (2023)
This study aims to optimize the flow channel design for a proton exchange membrane electrolyzer cell (PEMEC) to minimize the pressure drop across the cell. The pattern of parallel flow channels is considered with a dual-porous layer structure sandwic
Externí odkaz:
https://doaj.org/article/7b9dd176db1f46228e4de1155ae8d1fd
Autor:
Chih-Chia Lin, 林志佳
106
In this research, we discuss a scheduling problem including n non-preemptive jobs and m identical parallel machines with availability constraints. Our objective is minimizing the total completion time.. Most scheduling problems assume machin
In this research, we discuss a scheduling problem including n non-preemptive jobs and m identical parallel machines with availability constraints. Our objective is minimizing the total completion time.. Most scheduling problems assume machin
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/mp8hk5
Autor:
Chih-Chia Lin, 林志嘉
102
Acceptance sampling plan is a typical and practical tool in quality management and assurance field. It can make a decision on product acceptance and provide the protection to both the buyer and the vender. However, traditional attributes acc
Acceptance sampling plan is a typical and practical tool in quality management and assurance field. It can make a decision on product acceptance and provide the protection to both the buyer and the vender. However, traditional attributes acc
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/82536045331454281615
Autor:
Chih-chia Lin, 林志嘉
99
This research referred that the Shanghai Stock market short-term exhibits the price contrarian effect, the medium and long-term exhibits the price momentum effect. Furthermore, it also discovers that the investors have the psychology and the
This research referred that the Shanghai Stock market short-term exhibits the price contrarian effect, the medium and long-term exhibits the price momentum effect. Furthermore, it also discovers that the investors have the psychology and the
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/26584648680706997663
Autor:
chih-chia Lin, 林志嘉
96
Undisplaced femoral neck fracture is a common senile injury. Pinning in situ for the fracture site remains the gold standard of treatment. The fracture site is located in the hip joint, so nonunion and avascular necrosis of femoral head usual
Undisplaced femoral neck fracture is a common senile injury. Pinning in situ for the fracture site remains the gold standard of treatment. The fracture site is located in the hip joint, so nonunion and avascular necrosis of femoral head usual
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/46275625996661572328
Autor:
Wei‐Hsin Chen, Yi‐Wei Li, Chih‐Chia Lin, Min‐Hsing Chang, Ayyadurai Saravanakumar, Lip H. Saw
Publikováno v:
International Journal of Energy Research. 46:18947-18963
Autor:
Abhinav Kranti, Jyi-Tsong Lin, Hung-Hsiu Lin, Yi-Jie Chen, Cyuan-You Yu, Chih-Chia Lin, Wei-Han Lee
Publikováno v:
IEEE Transactions on Electron Devices. 64:4937-4945
In this paper, we propose a vertical transistor with n-bridge and body on gate (BOG-DRAM) for Low-power 1T-DRAM application. The vertical channel of the device can reduce the short-channel effect and improve scalability. The storage region stacked on
Autor:
Chih-Kai Huang, Ting-Chung Chang, Ting-Pi Hsu, Abhinav Kranti, Cyuan-You Yu, Chih-Chia Lin, Jyi-Tsong Lin, Po-Hsieh Lin
Publikováno v:
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In this paper, we propose a capacitor-less 1T-DRAM structure with the pass-way trench for improving the Retention Time (RT). We have improved the device fabrication process to form the pass-way trench of the structure which combines the Vertical Chan
Publikováno v:
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
A vertical junctionless channel with T-shaped gate (VJCT) structure has been proposed as 1T DRAM. Designing in vertical channel topology can overcome scalability issues and reduce the area occupied. Also, the junctionless architecture of the channel
Publikováno v:
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
It is the first time, we propose a new reading mechanism for an ARAM-like 1T-DRAM by exploiting Punch-Through (PT) phenomenon. We simulated and investigated the results of a modified ARAM structure with respect to different channel length, channel th