Zobrazeno 1 - 10
of 65
pro vyhledávání: '"Chih-Cheng Shih"'
Autor:
Mei Yuan, Yi-Ting Tseng, Po-Hsun Chen, Chih-Cheng Shih, Hui-Chun Huang, Ting-Chang Chang, Xiaole Cui, Xinnan Lin, Shengdong Zhang, Hang Zhou
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 627-632 (2018)
In conventional HfO2-based resistive random access memory (RRAM), SiO2 is usually adopted as side wall spacer (low-k spacer) to define the device feature size. It is found that the forming voltage of the conventional HfO2 RRAM with SiO2 spacer rises
Externí odkaz:
https://doaj.org/article/2a3a3df9e7fd42819a748ac0500399db
Autor:
Fang-Yuan Yuan, Ning Deng, Chih-Cheng Shih, Yi-Ting Tseng, Ting-Chang Chang, Kuan-Chang Chang, Ming-Hui Wang, Wen-Chung Chen, Hao-Xuan Zheng, Huaqiang Wu, He Qian, Simon M. Sze
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)
Abstract A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable devi
Externí odkaz:
https://doaj.org/article/d8be428f694a44b7840cf47aa61fd96f
Autor:
Chih-Cheng Shih, 石致誠
101
The rate of technology growth is getting faster and faster. The needs of people are als getting more and more. Thus, the traditional TVs are redesigned towards the development of intelligent technology, and TVs have a brand-new look and styl
The rate of technology growth is getting faster and faster. The needs of people are als getting more and more. Thus, the traditional TVs are redesigned towards the development of intelligent technology, and TVs have a brand-new look and styl
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/r2ff96
Autor:
Chih-Cheng Shih, 施志成
94
The purpose of this research is to confer the relation of intellectual capital (IC) elements, Value Added Intellectual Capital (VAIC) and enterprise performance. Information Technology (IT) industry is a knowledge based industry, the characte
The purpose of this research is to confer the relation of intellectual capital (IC) elements, Value Added Intellectual Capital (VAIC) and enterprise performance. Information Technology (IT) industry is a knowledge based industry, the characte
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/6w4j2g
Autor:
Ying-Hsin Lu, Ting-Chang Chang, Yu-Chiang Hung, Ting-Hao Wang, Yi-Ting Tseng, Ming-Hui Wang, Hao-Xuan Zheng, Wen-Long Hu, Chih-Cheng Shih
Publikováno v:
Biomedical Journal. 44:S267-S274
While acupuncture has been used for thousands of years, modern technology to develop new needle materials has rarely been discussed. We aim to explore a new acupuncture needle material and compare the differences in the needling sensations between th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1392eef725f87129722c57c2362c1580
https://doi.org/10.1016/j.bj.2020.11.010
https://doi.org/10.1016/j.bj.2020.11.010
Autor:
Jian-Jie Chen, Min-Chen Chen, Ting-Chang Chang, Hong-Chih Chen, Kuan-Ju Zhou, Chuan-Wei Kuo, Chih-Cheng Yang, Pei-Yu Wu, Chih-Cheng Shih, Jen-Wei Huang
Publikováno v:
Materials Science in Semiconductor Processing. 156:107264
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a998ff57c17ec0b3828d33fe6f3f5fbc
https://doi.org/10.1016/j.mssp.2022.107264
https://doi.org/10.1016/j.mssp.2022.107264
Autor:
Jian-Jie Chen, Kuan-Ju Zhou, Chuan-Wei Kuo, Wei-Chih Lai, Hui-Chun Huang, Hong-Chih Chen, Chih-Cheng Yang, Ting-Chang Chang, Guan-Fu Chen, Yu-Shan Shih, Wan-Ching Su, Chih-Cheng Shih
Publikováno v:
IEEE Transactions on Electron Devices. 67:3123-3128
The quality and stability of thin-film transistors (TFTs) applied to large-scale displays are crucial to their successful manufacture and commercial applicability. This article introduces a TFT manufacturing process in which the source/drain system i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f533eb4ee8d4c08205cceaf2ce6411bd
https://doi.org/10.1109/ted.2020.2998101
https://doi.org/10.1109/ted.2020.2998101
Autor:
Wei-Jang Chen, Pei-Yu Wu, Chih-Cheng Yang, Tsung-Ming Tsai, Xiaohua Ma, Yung-Fang Tan, Simon M. Sze, Ting-Chang Chang, Yue Hao, Wen-Chung Chen, Hao-Xuan Zheng, Chih-Cheng Shih, Mao-Chou Tai, Hui-Chun Huang
Publikováno v:
IEEE Electron Device Letters. 41:357-360
In this experiment, the electrical performance of zinc oxide based-resistive random access memory (RRAM) is successfully improved by using annealing in ammonia hydroxide solution at low-temperature and high pressure to complete ammonium-doped ZnO bas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f5c03ef950a757b0413e4af9da42fe9
https://doi.org/10.1109/led.2020.2968629
https://doi.org/10.1109/led.2020.2968629
Autor:
Ying-Chen Chen, Hao Wang, Simon M. Sze, Wei-Chen Huang, Chih-Cheng Shih, Hui-Chun Huang, C.S. Chen, Chun-Chu Lin, Ting-Chang Chang, Po-Hsun Chen, Yi-Ting Tseng, Yao-Feng Chang, Hao-Xuan Zheng, Chih-Yang Lin
Publikováno v:
IEEE Transactions on Electron Devices. 65:4622-4627
In this paper, vanadium oxide (VO x ) was chosen for the resistive switching layer in a typical resistive random access memory (RRAM) structure. During negative forming bias, we found an initial selector property. This indicates the presence of metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::975b7aa559867a501b8a2034931ae7ce
https://doi.org/10.1109/ted.2018.2862917
https://doi.org/10.1109/ted.2018.2862917
Autor:
Shengdong Zhang, Cheng-Hsien Wu, Ting-Chang Chang, Ming-Hui Wang, Yu-Shuo Lin, Wen-Chung Chen, Tsung-Ming Tsai, Chih-Hung Pan, Wen-Yan Lin, Po-Hsun Chen, Shih-Kai Lin, You-Lin Xu, Chih-Cheng Shih, Simon M. Sze
Publikováno v:
IEEE Electron Device Letters. 39:1163-1166
In this letter, we determine the importance of the electrical field distribution and strength during the switching process by demonstrating different trends in the degree of reset and the reset pulse time. In general, a longer reset pulse time result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d28697d54b5171743a203917384f3d2
https://doi.org/10.1109/led.2018.2849507
https://doi.org/10.1109/led.2018.2849507