Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Chih-Chang Cheng"'
Publikováno v:
IEEE Transactions on Electron Devices. 55:838-843
We report a high effective work function (Phim-eff) and a very low Vt Ir gate on HfLaO p-MOSFETs using novel self-aligned low-temperature shallow junctions. This gate-first process has shallow junctions of 9.6 or 20 nm that are formed by solid phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f567ee72dd4311f62a7c06cfb4b28040
https://doi.org/10.1109/ted.2007.915060
https://doi.org/10.1109/ted.2007.915060
Autor:
Chih-Chang Cheng, J.F. Lin, S. Pan, S.L. Hsu, T.H. Hsieh, J.T. Tzeng, R.S. Liou, Y.C. Jong, Tahui Wang
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 6:358-363
Degradation of lateral diffused MOS transistors in various hot-carrier stress modes is investigated. A novel three-region charge-pumping technique is proposed to characterize interface trap (N it) and bulk oxide charge Qox creation in the channel and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b60f38a435d0791ff4f60aa552aafe19
https://doi.org/10.1109/tdmr.2006.883834
https://doi.org/10.1109/tdmr.2006.883834
Excess Low-Frequency Noise in Ultrathin Oxide n-MOSFETs Arising From Valence-Band Electron Tunneling
Autor:
H.C. Ma, Chih-Sheng Chang, Jun-Wei Wu, Jian-Wen You, Gou-Wei Huang, Chang-Feng Hsu, Chih-Chang Cheng, Tahui Wang
Publikováno v:
IEEE Transactions on Electron Devices. 52:2061-2066
Low-frequency flicker noise in analog n-MOSFETs with 15-/spl Aring/ gate oxide is investigated. A new noise generation mechanism resulting from valence-band electron tunneling is proposed. In strong inversion conditions, valence-band electron tunneli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2c320b83f5bbc7e66fd1770e19229ab
https://doi.org/10.1109/ted.2005.854264
https://doi.org/10.1109/ted.2005.854264
Autor:
Jun-Wei Wu, Gou-Wei Huang, Jyh-Chyurn Guo, Chih-Chang Cheng, Wai-Yi Lien, Kai-Lin Chiu, Chih-Sheng Chang, Tahui Wang
Publikováno v:
IEEE Transactions on Electron Devices. 51:1262-1266
The pocket implantation effect on drain current flicker noise in 0.13 /spl mu/m CMOS process based high performance analog nMOSFETs is investigated. Our result shows that pocket implantation will significantly degrade device low-frequency noise prima
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf9aea8161edb3556535ea7aaa5328b0
https://doi.org/10.1109/ted.2004.831369
https://doi.org/10.1109/ted.2004.831369
Autor:
Ru-Yi Su, Ruey-hsin Liou, F. J. Yang, H. C. Tuan, Ker-Hsiao Huo, Chih-Chang Cheng, J. L. Tsai
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
In this paper, a 700V lateral insulated gate bipolar transistor (LIGBT) design is proposed in a junction-isolated technology. Several key properties of LIGBT, such as hole injection leakage and breakdown-voltage, are investigated by using two-dimensi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0831ac5979a42737d95abda21554c997
https://doi.org/10.1109/ispsd.2012.6229063
https://doi.org/10.1109/ispsd.2012.6229063
Autor:
K. Wu, Y. C. Jong, Chih-Chang Cheng, R. S. Liou, Jun Cai, H. C. Tuan, H. L. Chou, C. L. Tsai, F. Y. Chu, Yen-Chu Lin
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
A two-stage drain current phenomenon in saturation region, named as I d -V d hump, has been investigated in high-voltage NMOS transistor. A parasitic BJT turn-on enhanced I d -V d hump model is proposed and characterized by using a two-dimensional de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbae20a7f417959299864207a371dd7b
https://doi.org/10.1109/ispsd.2011.5890827
https://doi.org/10.1109/ispsd.2011.5890827
Autor:
Chih-Chang Cheng, J.F. Lin, Tahui Wang, T.H. Hsieh, J.T. Tzeng, Y.C. Jong, R.S. Liou, Samuel C. Pan, S.L. Hsu
Publikováno v:
2007 IEEE International Electron Devices Meeting.
Self-heating induced transient hot carrier effects in high-voltage n-LDMOS are investigated. A novel LDMOS structure incorporating a metal contact in the bird's beak region is fabricated, which allows us to probe an internal voltage transient in hot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4401943cfb2f6a6367eee5891c9b16ae
https://doi.org/10.1109/iedm.2007.4419090
https://doi.org/10.1109/iedm.2007.4419090
Publikováno v:
Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743).
The hot carrier performance of N-LDMOS and P-LDMOS transistors is evaluated. For N-LDMOS transistors, the drain current degradation is shown to be due to hot electron injection in the drift region field oxide (bird's beak edge). On the other hand, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05a1f959cf84cd56da95e27a0b89249b
https://doi.org/10.1109/ipfa.2004.1345626
https://doi.org/10.1109/ipfa.2004.1345626
Autor:
Gou-Wei Huang, Jun-Wei Wu, Kai-Lin Chiu, Tahui Wang, Wai-Yi Lien, Chih-Chang Cheng, J. C. Guo
Publikováno v:
Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcd459e59020ebf54eb62394e00f56fd
https://doi.org/10.7567/ssdm.2003.p2-3
https://doi.org/10.7567/ssdm.2003.p2-3
Publikováno v:
Proceedings of the 11th International Symposium on the Physical & Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743); 2004, p283-286, 4p