Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Chih Ting Yeh"'
Publikováno v:
2022 IEEE 35th International Conference on Micro Electro Mechanical Systems Conference (MEMS).
Publikováno v:
IEEE/WIC/ACM International Conference on Web Intelligence.
Publikováno v:
Heat Transfer Research. 50:349-360
Publikováno v:
IEEE Transactions on Electron Devices. 65:769-775
In this paper, we propose a recessed-gate tunneling field-effect transistor (TFET) to improve the on current of TFETs by increasing the tunnel area with line tunneling. We investigate the effects of the recessed-body thickness and the doping level on
Publikováno v:
International Communications in Heat and Mass Transfer. 88:84-90
This present study proposed a novel low-cost and high performance braided wire wick structure having superhydrophilic treatment applicable for ultra-thin heat pipe. The test wick structures include mono and composite wick structure. The composite bra
Publikováno v:
ICASSP
In this paper we propose speaker characterization using time delay neural networks and long short-term memory neural networks (TDNN-LSTM) speaker embedding. Three types of front-end feature extraction are investigated to find good features for speake
Autor:
Chih-Ting Yeh, 葉致廷
107
In this thesis, we propose a speaker recognition system with replay spoofing detection mechanism which can be used in smart home device. Our system not only can identify who call the device, but also can prevent from unregistered user replay
In this thesis, we propose a speaker recognition system with replay spoofing detection mechanism which can be used in smart home device. Our system not only can identify who call the device, but also can prevent from unregistered user replay
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/tjh22b
Publikováno v:
Applied Thermal Engineering. 98:756-765
The photo-thermal-electro characteristics of a high power InGaN LED module were studied both experimentally and theoretically. Three types of heat sink substrate composed of two layers of materials were used to investigate the coupled relationships b
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
We propose a Gated-PN iTFET that places the gate over the source to increase the line-tunneling area and ON current. The device avoids the ambipolar effect, reduces trap-assisted tunneling, and improves subthreshold swing (SS). Across a very wide ran
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In this paper, we proposed an new Double-Gate (DG) PN-type tunneling field-effect transistor with exploiting induced channel layer (iTFETs) for line tunneling and low power applications (V D = 0.1V & 0.05V). Unlike conventional TFET, with same type o