Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Chih Hung Yang"'
Autor:
CHIH HUNG YANG, 楊志宏
98
Today, in semiconductor manufacturing industry, the whole environment have already begun forward to the direction of specialization. Due to the competition between companies is becoming more and more fierce, the manufacturing process must be
Today, in semiconductor manufacturing industry, the whole environment have already begun forward to the direction of specialization. Due to the competition between companies is becoming more and more fierce, the manufacturing process must be
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/23882236764370360196
Publikováno v:
Buildings, Vol 12, Iss 8, p 1187 (2022)
Recently, expanded metal mesh has been used on the facades of many buildings in Taiwan. Therefore, in this study, we evaluated the impact of expanded metal mesh on natural lighting and energy consumption in office buildings. First, the compatibility
Externí odkaz:
https://doaj.org/article/c48745d1926c4444bfe036519f7c9bfc
Autor:
Yaw-Shyan TSAY, Chih-Hung YANG
Publikováno v:
E3S Web of Conferences, Vol 111, p 03049 (2019)
Expanded metal mesh has become widely used as a shading element in the façade of many buildings in recent years, and its energy saving performance has been evaluated in tropical/subtropical countries. However, expanded metal mesh reduces solar radia
Externí odkaz:
https://doaj.org/article/848dae98aa5e474d968d85cf9ab94996
Publikováno v:
EURASIP Journal on Advances in Signal Processing, Vol 2010 (2010)
A multi-threshold level set model for image segmentations is presented in the paper. The Multi-threshold level set formulation uses a speed function for stopping the locations of the active contours. The speed function with multiple thresholds is des
Externí odkaz:
https://doaj.org/article/c9b086bfb2b241d2b2c439aab328bed9
Autor:
Yu-Ting Huang, Shen-Li Chen, Jia Ming Lin, Yi Cih Wu, Chih Ying Yen, Kuei Jyun Chen, Chih Hung Yang
Publikováno v:
Applied Mechanics and Materials. 870:401-406
Electrostatic-discharge (ESD) immunity measurements of different layout manners in the drain-side of HV pLDMOS devices are investigated in this paper. Here, eleven kinds of drain-side "npnpn" arranged-types of pLDMOS-SCR parasitic structure are used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4db724979f9a525d2dbce0551554265
https://doi.org/10.4028/www.scientific.net/amm.870.401
https://doi.org/10.4028/www.scientific.net/amm.870.401
Autor:
Yu-Lin Jhou, Jen-Hao Lo, Yu-Lin Lin, Yi-Hao Chiu, Pei-Lin Wu, Chih-Hung Yang, Shen-Li Chen, Chun-Ting Kuo, Yi-Hao Chao
Publikováno v:
2018 IEEE International Conference on Consumer Electronics-Taiwan (ICCE-TW).
The traditional p-channel LDMOS is often used as a electrostatic discharge self-protection components in high voltage circuit input/output pads. Nevertheless, it has one serious shortcoming that is the poor conductivity of pLDMOS leads to a very low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::141beba44226b79e2ff027afef0d0fae
https://doi.org/10.1109/icce-china.2018.8448414
https://doi.org/10.1109/icce-china.2018.8448414
Publikováno v:
International Journal of Signal Processing, Image Processing and Pattern Recognition. 8:361-374
Object tracking is an important function of video surveillance system. For the same object in a multi-camera environment, how to assign the same label to this object is so-called consistent labeling problem. Many consistent labeling approaches propos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcdd69c6f59d0d1e0ead5eec4c867086
https://doi.org/10.14257/ijsip.2015.8.2.34
https://doi.org/10.14257/ijsip.2015.8.2.34
Autor:
Yu-Lin Lin, Jia-Ming Lin, Yi-Hao Chiu, Yi-Hao Chao, Chih-Hung Yang, Yi-Cih Wu, Kuei-Jyun Chen, Jen-Hao Lo, Chun-Ting Kuo, Chih-Ying Yen, Hung-Wei Chen, Shen-Li Chen
Publikováno v:
2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
In this work, ESD immunity enhancement for the HV n-channel LDMOS with source-end discrete islands fabricated by a TSMC 0.25 μm 60 V process was investigated. An nLDMOS device always has poor ESD capability. If discrete n+ islands are formed in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e5ff794c7525fb8013d9c1147a6f845
https://doi.org/10.1109/ipfa.2017.8060126
https://doi.org/10.1109/ipfa.2017.8060126
Autor:
Yi-Hao Chao, Kuei-Jyun Chen, Jen-Hao Lo, Chih-Ying Yen, Yi-Cih Wu, Shen-Li Chen, Jia-Ming Lin, Yu-Lin Lin, Yi-Hao Chiu, Chih-Hung Yang, Chun-Ting Kuo
Publikováno v:
2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia).
HV n-/p-LDMOS devices with the source-side extending into bulk-region to evaluate the electrostatic-discharge (ESD) protection robustness by a TSMC 0.25 µm 60 V process are investigated in this paper. After a systematic analysis, the trigger voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::200d5a2bdf4d88ca1f7b3656918f983b
https://doi.org/10.1109/ifeec.2017.7992390
https://doi.org/10.1109/ifeec.2017.7992390
Autor:
Yi-Cih Wu, Yi-Hao Chiu, Jia-Ming Lin, Chih-Ying Yen, Yi-Hao Chao, Chih-Hung Yang, Kuei-Jyun Chen, Chun-Ting Kuo, Yu-Lin Lin, Hung-Wei Chen, Jen-Hao Lo, Shen-Li Chen
Publikováno v:
2017 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-TW).
The pLDMOS related devices fabricated by a TSMC 0.25 µm 60 V process was investigated in this paper. For the ESD improvement, some DUTs inserting the N+ zone to form an embedded SCR in the drain end or guard-ring area, respectively. From the TLP tes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a40b0b064bd57c928bba1c92d1cdfd9
https://doi.org/10.1109/icce-china.2017.7991155
https://doi.org/10.1109/icce-china.2017.7991155