Zobrazeno 1 - 10
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pro vyhledávání: '"Chih Chin Yang"'
Autor:
Chih Chin Yang, 楊誌欽
102
The relationships between professional competence and school based curriculum are explored in this thesis. Cultivation of talented person in professional competence of the microelectronic engineering subject in Taiwan is also explored. The p
The relationships between professional competence and school based curriculum are explored in this thesis. Cultivation of talented person in professional competence of the microelectronic engineering subject in Taiwan is also explored. The p
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/27744713673813455846
Autor:
Chih Chin Yang, Cong Min Hu
Publikováno v:
Materials Science in Semiconductor Processing. 164:107567
Publikováno v:
2022 IEEE 4th Eurasia Conference on Biomedical Engineering, Healthcare and Sustainability (ECBIOS).
Publikováno v:
2021 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS).
Autor:
Yi-Chin Fang, Jenny Chih-Yu Lee, Chih-Kai Cheng, Yu-Mei Liu, Cheng-Fu Yang, Chih-Chin Yang, Hsiao-Yi Lee, Shun-Hsyung Chang
Publikováno v:
Modern Physics Letters B. 35
Hydrophones with three different resonant cavities (microscope slide, cavity with 9.8 mm diameter and 5.7 mm[Formula: see text] curve surface, and cavity with 14 mm diameter and 6.5 mm[Formula: see text] curve surface) and with two different electrod
Autor:
Chih Chin Yang, Chih Cheng Wu, Yu Liang Hsiao, Zong Hsien Wu, Shun Hsyung Chang, Hung Yu Wang, Chih Lung Shen
Publikováno v:
IEEE Transactions on Dielectrics and Electrical Insulation. :1-1
Publikováno v:
International Journal of Modern Physics B. 34:2040155
Behavior models are proposed for HSPICE simulation of first-, second- and third-generation current conveyors. They can be used to speed up the exploration and verification of current conveyor-based circuit designs. To demonstrate the feasibility and
Autor:
Chih Chin Yang
Publikováno v:
Electronics, Vol 8, Iss 6, p 673 (2019)
Electronics
Volume 8
Issue 6
Electronics
Volume 8
Issue 6
A resonant tunneling electronic circuit (RTEC) with high and multiple peak-to-valley current density ratios (PVCDRs) exhibited in the negative differential resistance (NDR) curve has been proposed in this research. The PVCDR values in simulating rese
The characteristics of the gallium-doped zinc oxide films using radio frequency magnetron sputtering
Publikováno v:
2018 7th International Symposium on Next Generation Electronics (ISNE).
Transparent conductive gallium-doped zinc oxide (GZO) thin films with different deposition power (from 75 to 150 W) were prepared on the Coring glass substrate by using R.F. magnetron sputtering method. The resulting GZO thin films were crystalline,
Publikováno v:
Microelectronics Journal. 46:1392-1397
InAs-based p-n interband tunneling bi-barrier resonant microwave (ITE BBRM) devices were successfully fabricated by using the molecular beam epitaxial (MBE) method in this research. The influence of a central barrier thickness from 10A to 40A on elec