Zobrazeno 1 - 10
of 77
pro vyhledávání: '"Chih Chiang Kao"'
Autor:
Chih-chiang Kao, 高志強
104
This thesis reads Death in Venice, A Single Man, and The Married Man in the context of age-discriminatory atmosphere of gay subculture. I argue that gay fiction not only represents the youthist and ageist stereotypes and myths in gay subcult
This thesis reads Death in Venice, A Single Man, and The Married Man in the context of age-discriminatory atmosphere of gay subculture. I argue that gay fiction not only represents the youthist and ageist stereotypes and myths in gay subcult
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/6a55p3
Publikováno v:
Advanced Materials Research. 187:458-463
Patents are distributed through hundreds of collections, divided up by general area. A hybrid classifier system thus can be a powerful solution to difficult patent classification problems. In this study, we present a system for classifying patent doc
Autor:
Yuh-Renn Wu, S. C. Wang, Wen-Yung Yeh, His Hsuan Yen, Chih Chiang Kao, Han Wei Yang, Peichen Yu, C. H. Chiu, Tien-Chang Lu, Jui-Yuan Chen, Hao-Chung Kuo
Publikováno v:
ECS Transactions. 16:139-143
A free-standing nanopillar with a diameter of 300 nm, and a height of 2 μm is successfully demonstrated by focused ion beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blue shift o
Autor:
Shih-Wei Chen, Tsung-Ting Kao, Gen Sheng Huang, Jun-Rong Chen, Tien-Chang Lu, Shing-Chung Wang, Jong Tang Chu, Li Fan Lin, Hao-Chung Kuo, Chih Chiang Kao
Publikováno v:
Japanese Journal of Applied Physics. 46:5397-5407
We review the fabrication technology and performance characteristics of optically pumped GaN-based vertical cavity surface emitting lasers (VCSELs). Two types of VCSELs with different microcavity structures are described. First type of VCSEL has a hy
Autor:
Tien-Chang Lu, Shing-Chung Wang, Hung Wen Huang, Wei-Chih Wang, Yu Chang-Chin, J.T. Chu, Shou-Yi Kuo, Chih-Chiang Kao, Hao-Chung Kuo
Publikováno v:
Materials Science and Engineering: B. 136:182-186
The InGaN/GaN light emitting diodes (LEDs) with a nano-roughened top p-GaN surface fabricated by using Ni nano-masks and laser etching methods were demonstrated and analyzed. The experiment results observed the maximum light output power of the InGaN
Autor:
Chih-Chiang Kao, Shing-Chung Wang, Hao-Chung Kuo, Hung Wen Huang, Yu Chang-Chin, J.T. Chu, W.D. Liang
Publikováno v:
Materials Chemistry and Physics. 99:414-417
In this paper, we reported the InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface which caused by KrF excimer laser-irradiation. Comparing with the conventional LED, the brightness of InGaN/GaN light emitting diode (LED) was
Autor:
Hung Wen Huang, Jung Tang Chu, Chang-Chin Yu, R. J. Tsai, Shing-Chung Wang, Chia-Feng Lin, Chih Chiang Kao, Hao-Chung Kuo, Chun-Feng Lai, Tien-Chang Lu
Publikováno v:
Nanotechnology. 17:2998-3001
This investigation describes the development of a InGaN/GaN light-emitting diode (LED) with textured sidewalls using natural lithography with polystyrene spheres (PSs) as the etching mask and dry etching the epitaxial layers of LEDs to achieve nano-s
Publikováno v:
Materials Chemistry and Physics. 97:10-13
We report the utilization of an selective As + -implanted underlying layer and regrowth method to enhance and control the wet thermal oxidation rate for 850 nm oxide-confined VCSEL. The oxidation rate of the As + -implanted device showed a four-fold
Autor:
Hung Wen Huang, Chih Chiang Kao, Tao Hung Hsueh, Shing-Chung Wang, Shou-Yi Kuo, Tien-Chang Lu, Hao-Chung Kuo, Chang-Chin Yu, Jung Tang Chu
Publikováno v:
Japanese Journal of Applied Physics. 45:3442-3445
The InGaN/GaN light-emitting diode (LED) with a top p-GaN surface nanoroughened using Ni nanomasks and laser etching has been fabricated. The light output power of the InGaN/GaN LED with a nanoroughened top p-GaN surface is 1.55-fold that of a conven
Autor:
Hao-Chung Kuo, Wen Deng Liang, Chih Chiang Kao, Tien-Chang Lu, J. Y. Tsai, Jung Tang Chu, Shing-Chung Wang, H. H. Yao
Publikováno v:
Japanese Journal of Applied Physics. 45:2556-2560
Room-temperature optically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs) were demonstrated by laser lift-off. A VCSEL was fabricated by combining a GaN-based cavity with two dielectric distributed Bragg reflectors: SiO2/TiO2 and S