Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Chieng-Chung Hsu"'
Autor:
Chong-Jhe Sun, Meng-Ju Tsai, Siao-Cheng Yan, Tzu-Ming Chu, Chieng-Chung Hsu, Chun-Lin Chu, Guang-Li Luo, Yung-Chun Wu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1016-1020 (2020)
We successfully fabricate the Si0.8Ge0.2 channel fin field-effect-transistor (FinFET) with 5 nm ultra-thin fin width and high aspect ratio (~10×) on silicon-on-insulator (SOI) substrate by simple two-step dry etching. In comparison of the convention
Externí odkaz:
https://doaj.org/article/816ae23d20c941b8b184586460b00d2c
Autor:
Meng-Ju Tsai, Kang-Hui Peng, Chong-Jhe Sun, Siao-Cheng Yan, Chieng-Chung Hsu, Yu-Ru Lin, Yu-Hsien Lin, Yung-Chun Wu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1133-1139 (2019)
Present work demonstrates the vertically double stacked nanosheet (NS) p-channel polycrystalline silicon (poly-Si) junctionless field-effect transistors (JL-FET) with tri-gate, omega-gate, and gate all around (GAA) structure. These structures offer m
Externí odkaz:
https://doaj.org/article/beb36e72cf9342389ae6efc9c2f0a9f8
Autor:
Fu-Ju Hou, Po-Yang Peng, Pin-Jui Chen, Yung-Chun Wu, Chieng-Chung Hsu, Meng-Ju Tsai, Dun-Bao Ruan
Publikováno v:
IEEE Electron Device Letters. 40:1233-1236
We report ultra-thin 2-nm-, 3-nm-, and 5-nm -thick Hf0.5Zr0.5O2 (HZO) thin films using atomic-level characterization of ferroelectric fin field-effect-transistors (Fe-FinFET). First, the results of high-resolution grazing incidence X-ray diffraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34165f981820ee3e506411ff5a7c2af8
https://doi.org/10.1109/led.2019.2922239
https://doi.org/10.1109/led.2019.2922239
Autor:
Kang-Hui Peng, Meng-Ju Tsai, Yung-Chun Wu, Siao-Cheng Yan, Chieng-Chung Hsu, Chong-Jhe Sun, Yu-Ru Lin, Yu-Hsien Lin
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1133-1139 (2019)
Present work demonstrates the vertically double stacked nanosheet (NS) p-channel polycrystalline silicon (poly-Si) junctionless field-effect transistors (JL-FET) with tri-gate, omega-gate, and gate all around (GAA) structure. These structures offer m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd2bf9b4b5e6b3e7aa29ef7608e0bc49
https://doi.org/10.1109/jeds.2019.2952150
https://doi.org/10.1109/jeds.2019.2952150